Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells

Author(s):  
Takeshi Uenoyama ◽  
Masakatsu Suzuki
2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.


1998 ◽  
Vol 184-185 ◽  
pp. 623-626
Author(s):  
F.P. Logue ◽  
P. Rees ◽  
C. Jordan ◽  
J.F. Donegan ◽  
J. Hegarty ◽  
...  
Keyword(s):  

2001 ◽  
Vol 79 (19) ◽  
pp. 3038-3040 ◽  
Author(s):  
Chang Kyu Kim ◽  
Yong Hee Lee

2014 ◽  
Vol 02 (02) ◽  
pp. 1440014
Author(s):  
J. CHEN ◽  
W. J. FAN ◽  
Q. J. WANG ◽  
MARCIN GEBSKI ◽  
MACIEJ DEMS ◽  
...  

Photonic crystal vertical-cavity surface-emitting laser structure with incorporation of high-index-contrast subwavelength gratings is fabricated and the three quantum well active region of the structure is investigated with 8 band k.p model. The dispersion of energy sub-bands and wave functions in the conduction bands and valence bands indicate that effective overlapping and interactions between electrons and holes can be realized in the quantum wells and that the maximum spontaneous emission rate and optical gain occurs at the expected wavelength, which is confirmed by the measured photoluminescence spectrum.


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