Single-crystalline oxide films of the Al 2 O 3 -Y 2 O 3 -R 2 O 3 system as optical sensors of various types of ionizing radiation: significant advantages over volume analogs

Author(s):  
Yuri V. Zorenko ◽  
M. Batenchuk ◽  
V. Gorbenco ◽  
M. Pashkovsky
2010 ◽  
Vol 297-301 ◽  
pp. 954-959 ◽  
Author(s):  
Aurelien Perron ◽  
Sébastien Garruchet ◽  
Olivier Politano ◽  
G. Aral ◽  
Vincent Vignal

We investigated the oxidation of nanocrystalline aluminum surfaces by using variable charge molecular dynamics at 600 K under three oxygen pressures: 1, 10 and 20 atm. The interaction potential was described by the electrostatic plus (Es+) model that allows dynamical charge transfer among atoms. We mainly focused on the effect of the oxygen pressure on the oxidation kinetic, the chemical composition and the microstructure of the oxide films formed. The results show that oxidation kinetics as well as chemical composition and microstructure depend on the applied oxygen pressure. The oxide film thickness tends to a limiting value equal to ~3 nm. Finally, we obtained a partially crystalline oxide films for all oxygen pressures and we observed that the degree of crystallinity increases with time.


1998 ◽  
pp. 623-626
Author(s):  
Masato Hasegawa ◽  
Yutaka Yoshida ◽  
Yoshiaki Ito ◽  
Morihiro Iwata ◽  
Junichi Kawashima ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tiangui You ◽  
Kai Huang ◽  
Xiaomeng Zhao ◽  
Ailun Yi ◽  
Chen Chen ◽  
...  

AbstractThe abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO3 (LNO) single crystalline thin films are fabricated on Pt/SiO2/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive filaments only connect/disconnect with the bottom interface while the top interface maintains the Schottky contact. Thanks to the homogeneous distribution of defects in single crystalline thin films, highly reproducible and uniform self-rectifying resistive switching with large on/off ratio over four order of magnitude was achieved. Multilevel resistive switching can be obtained by varying the compliance current or by using different magnitude of writing voltage.


2019 ◽  
Vol 6 (5) ◽  
pp. 911-930 ◽  
Author(s):  
Yong Zhang ◽  
Chunrui Ma ◽  
Xiaoli Lu ◽  
Ming Liu

Recent progress in fabricating freestanding single-crystalline functional oxide thin films and their potential in integration with advanced electronics.


2007 ◽  
Vol 26 (2) ◽  
pp. 403-407 ◽  
Author(s):  
Siama Basharat ◽  
William Betchley ◽  
Claire J. Carmalt ◽  
Sarah Barnett ◽  
Derek A. Tocher ◽  
...  

2011 ◽  
Vol 83 (19) ◽  
Author(s):  
M. P. J. Punkkinen ◽  
P. Laukkanen ◽  
J. Lång ◽  
M. Kuzmin ◽  
M. Tuominen ◽  
...  

2020 ◽  
Vol 12 (47) ◽  
pp. 52929-52936
Author(s):  
Hao Zeng ◽  
Tsunaki Takahashi ◽  
Takehito Seki ◽  
Masaki Kanai ◽  
Guozhu Zhang ◽  
...  

2020 ◽  
Vol 30 (28) ◽  
pp. 2001236
Author(s):  
Ke Gu ◽  
Tsukasa Katayama ◽  
Shintaro Yasui ◽  
Akira Chikamatsu ◽  
Sou Yasuhara ◽  
...  

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