High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions

1997 ◽  
Author(s):  
Hui Nie ◽  
K. Alex Anselm ◽  
C. Hu ◽  
Ben G. Streetman ◽  
Joe C. Campbell
2000 ◽  
Vol 10 (01) ◽  
pp. 327-337
Author(s):  
J. C. CAMPBELL ◽  
H. NIE ◽  
C. LENOX ◽  
G. KINSEY ◽  
P. YUAN ◽  
...  

The evolution of long-haul optical fiber telecommunications systems to bit rates greater than 10 GB/s has created a need for avalanche photodiodes (APDs) with higher bandwidths and higher gain-bandwidth products than are currently available. It is also desirable to maintain good quantum efficiency and low excess noise. At present, the best performance (f3dB ~ 15 GHz at low gain and gain-bandwidth product ~ 150 GHz) has been achieved by AlInAs/InGaAs(P) multiple quantum well (MQW) APDs. In this paper we report a resonant-cavity InAlAs/InGaAs APD that operates near 1.55 μm. These APDs have achieved very low noise (k equivalent to 0.18) as a result of the very thin multiplication regions that were utilized. The low noise is explained in terms of a new model that accounts for the non-local nature of impact ionization. A unity-gain bandwith of 24 GHz and a gain-bandwidth-product of 290 GHz were achieved.


2003 ◽  
Author(s):  
H. Nie ◽  
C. Lenox ◽  
G. Kinsey ◽  
P. Yuan ◽  
A.L. Holmes ◽  
...  

Author(s):  
H. Nie ◽  
K.A. Anselm ◽  
C. Hu ◽  
C. Lenox ◽  
B.G. Streetman ◽  
...  

1998 ◽  
Vol 10 (3) ◽  
pp. 409-411 ◽  
Author(s):  
H. Nie ◽  
K.A. Anselm ◽  
C. Lenox ◽  
P. Yuan ◽  
C. Hu ◽  
...  

1997 ◽  
Vol 70 (2) ◽  
pp. 161-163 ◽  
Author(s):  
Hui Nie ◽  
K. A. Anselm ◽  
C. Hu ◽  
S. S. Murtaza ◽  
B. G. Streetman ◽  
...  

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015325
Author(s):  
Yuhong Zhou ◽  
Junqi Liu ◽  
Shenqiang Zhai ◽  
Ning Zhuo ◽  
Jinchuan Zhang ◽  
...  

2001 ◽  
Vol 13 (12) ◽  
pp. 1349-1351 ◽  
Author(s):  
M. Gokkavas ◽  
O. Dosunmu ◽  
M.S. Unlu ◽  
G. Ulu ◽  
R.P. Mirin ◽  
...  

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