Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates

1997 ◽  
Author(s):  
Kwok Kwong Loi ◽  
Lei Shen ◽  
Harry H. Wieder ◽  
William S. C. Chang
Keyword(s):  
Quantum Well ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Gaas Substrates ◽  
Waveguide Modulator

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

IIIA-1 high-frequency GaInAs/InP multiple quantum well buried mesa electroabsorption optical modulator

1987 ◽  
Vol 34 (11) ◽  
pp. 2362-2362 ◽  
Author(s):  
B.I. Miller ◽  
U. Koren ◽  
R.S. Tucker ◽  
G. Eisenstein ◽  
I. Bar-Joseph ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Optical Modulator ◽  
Multiple Quantum

EXCITONIC BAND-EDGE ELECTRO-ABSORPTION IN MULTIPLE-QUANTUM-WELL WAVEGUIDE MODULATOR STRUCTURES

1992 ◽  
Vol 01 (02) ◽  
pp. 339-365 ◽  
Author(s):  
N.E.J. HUNT ◽  
P.E. JESSOP
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Multiple Quantum Well ◽  
Band Edge ◽  
Multiple Quantum ◽  
Edge Absorption ◽  
Excitonic Band ◽  
Modulator Structure ◽  
Waveguide Modulator ◽  
Induced Changes

Electric field induced changes in the excitonic band-edge absorption spectra of Multiple-Quantum-Well (MQW) structures were investigated theoretically and experimentally. A comparison was made of three different exactly solvable methods for calculating quantum-well energies. The small effects due to conduction-band nonparabolicity and valence-band mixing were included. Transmission spectra were recorded for an In .12 Ga .88 As-GaAs optical waveguide modulator structure. The theoretical model was used to predict the changes in the long-wavelength tail of the band-edge absorption for different electric fields.

High frequency modulation of strained layer multiple quantum well optical amplifiers

1991 ◽  
Vol 27 (1) ◽  
pp. 62-64 ◽  
Author(s):  
U. Koren ◽  
B.I. Miller ◽  
M.G. Young ◽  
T.L. Koch ◽  
R.M. Jopson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Frequency Modulation ◽  
High Frequency ◽  
Optical Amplifiers ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Strained Layer

Asymmetric Fabry-Perot p-i-n multiple quantum well optical modulators grown on silicon and GaAs substrates

1992 ◽  
Vol 12 (2) ◽  
pp. 145-149 ◽  
Author(s):  
A. Dimoulas ◽  
K. Zekentes ◽  
E. Aperathitis ◽  
A. Georgakilas ◽  
J. Leng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Gaas Substrates ◽  
Fabry Perot
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