Comparison of visible spectra of the accelerating gap of a pulsed electron accelerator in a vacuum diode with cathodes made of different materials

2021 ◽  
Author(s):  
Ivan Egorov ◽  
Anton Klimkin ◽  
Artem Poloskov ◽  
Daniil Pomazkin ◽  
Maksim Serebrennikov ◽  
...  
Keyword(s):  
Electron Accelerator ◽  
Vacuum Diode ◽  
Visible Spectra

A high-current picosecond electron accelerator with a low-impedance vacuum diode

2000 ◽  
Vol 43 (4) ◽  
pp. 552-555 ◽  
Author(s):  
K. A. Zheltov ◽  
N. G. Pavlovskaya ◽  
I. G. Turundaevskaya ◽  
V. F. Shalimanov
Keyword(s):  
Electron Accelerator ◽  
Vacuum Diode ◽  
High Current

scholarly journals Plasma-filled diode in the electron accelerator on base of a pulsed linear transformer

2010 ◽  
Vol 28 (4) ◽  
pp. 547-552 ◽  
Author(s):  
B.M. Kovalchuk ◽  
A.A. Zherlitsyn ◽  
N.N. Pedin
Keyword(s):  
High Voltage ◽  
High Power ◽  
Rise Time ◽  
Electron Accelerator ◽  
Transmission Efficiency ◽  
Vacuum Diode ◽  
Sectional Area ◽  
High Current ◽  
Cross Sectional ◽  
Nanosecond Pulses

AbstractTechnique of a linear transformer allows now to build the generators of high power nanosecond pulses with the current rise time of ~100 ns without intermediate power compression stages. This technique is being examined for use in high current high voltage pulsed accelerators. Plasma-filled diode has several advantages over standard vacuum diode that allow to improve the accelerators parameters. In this paper, plasma-filled diode experiments are described on generation of e-beam in the linear transformer accelerator. Possibility of use in the diode of isolated parallel plasma channels has been proven for the e-beam generation with cross-sectional area up to 50 cm2. The beam with current of 100 kA at voltage more than 400 kV was generated in the plasma-filled diode. Energy transmission efficiency from primary storage into a beam is about 54%.

scholarly journals HYPERBOLIC FIELDS. SEARCH EXPERIMENTS WITH A VACUUM DIODE

Metaphysics ◽  
2020 ◽  
pp. 115-125
Author(s):  
D. G Pavlov ◽  
S. S Kokarev ◽  
Yu. V Gorlova ◽  
A. V Lapshin ◽  
M. S Panchelyuga ◽  
...  
Keyword(s):  
Electron Accelerator ◽  
Experimental Studies ◽  
Vacuum Diode ◽  
High Current

The article describes experiments carried out on the high-current pulsed electron accelerator Terek-2. The experiments, in their main features, reproduce the results obtained earlier in the Proton-21 laboratory. The incentive to carry out the experimental studies described in the article was an attempt to experimentally confirm the idea of a “hyperbolic lens” described in [1].

Optical Properties of HVEM Accelerators

1975 ◽  
Vol 33 ◽  
pp. 180-181
Author(s):  
A. Strojnik ◽  
J.W. Scholl ◽  
V. Bevc
Keyword(s):  
Optical Properties ◽  
Electron Accelerator ◽  
Systematic Investigation ◽  
Electron Source ◽  
High Brightness ◽  
The Past ◽  
Wide Range ◽  
Optical Behavior

The electron accelerator, as inserted between the electron source (injector) and the imaging column of the HVEM, is usually a strong lens and should be optimized in order to ensure high brightness over a wide range of accelerating voltages and illuminating conditions. This is especially true in the case of the STEM where the brightness directly determines the highest resolution attainable. In the past, the optical behavior of accelerators was usually determined for a particular configuration. During the development of the accelerator for the Arizona 1 MEV STEM, systematic investigation was made of the major optical properties for a variety of electrode configurations, number of stages N, accelerating voltages, 1 and 10 MEV, and a range of injection voltages ϕ0 = 1, 3, 10, 30, 100, 300 kV).

Infrared and UV-visible spectra of layer semiconductors Gas, GaSe and GaTe

1977 ◽  
Vol 38 (10) ◽  
pp. 1293-1299 ◽  
Author(s):  
U. Giorgianni ◽  
G. Mondio ◽  
P. Perillo ◽  
G. Saitta ◽  
G. Vermiglio
Keyword(s):  
Visible Spectra ◽  
Uv Visible

CONSTRUCTION AND TEST OF A CHANNELING-RADIATION SOURCE AT THE NEW DARMSTADT SUPERCONDUCTING ELECTRON ACCELERATOR

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-95-C9-98
Author(s):  
W. LOTZ ◽  
H. GENZ ◽  
A. RICHTER ◽  
W. KNÜPFER ◽  
J. P.F. SELLSCHOP
Keyword(s):  
Radiation Source ◽  
Electron Accelerator ◽  
Channeling Radiation

Investigating the Visible Spectra of Coloured Diamonds

1979 ◽  
Vol 16 (7) ◽  
pp. 433-447 ◽  
Author(s):  
Kenneth Scarratt
Keyword(s):  
Visible Spectra

Novel organic, polymeric materials for electronics applications

2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero
Keyword(s):  
Optical Density ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Substantial Improvement ◽  
Polymeric Systems ◽  
Patterned Wafers ◽  
Visible Spectra ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
Deposited Films

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.

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