In-situ laser nano-holed patterning of GaAs surface by the wetting of InAs layer

2021 ◽  
Author(s):  
Qiuyue Qi ◽  
Linyun Yang ◽  
Wei Zhang ◽  
Siyi Zhuang ◽  
Biao Geng ◽  
...  
Keyword(s):  
Gaas Surface

scholarly journals In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well

2004 ◽  
Vol 53 (10) ◽  
pp. 3521
Author(s):  
Yuan Xian-Zhang ◽  
Miao Zhong-Lin
Keyword(s):  
Quantum Well ◽  
Gaas Surface

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

In situ measurement method of GaAs surface coverage using secondary electron intensity

1991 ◽  
Vol 115 (1-4) ◽  
pp. 348-352 ◽  
Author(s):  
Kiyoshi Kanisawa ◽  
Jiro Osaka ◽  
Shigeru Hirono ◽  
Naohisa Inoue
Keyword(s):  
Measurement Method ◽  
Secondary Electron ◽  
Surface Coverage ◽  
In Situ Measurement ◽  
Gaas Surface ◽  
Electron Intensity

Buried Quantum Well Structure Fabricated by in Situ EB Lithography

1991 ◽  
Vol 236 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
N. Tanaka ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Gaas Surface ◽  
Photoluminescence Intensity ◽  
Positive Type ◽  
Quantum Well Structures ◽  
Lithography Process ◽  
Order Of Magnitude ◽  
Processed Sample

AbstractBuried quantum well structures have been fabricated in GaAs/AIGaAs system using an in situ lithography process. The process utilizes an ultrathin oxide layer formed in situ on a GaAs surface as a mask against Cl2 gas etching. An electron beam (EB)-induced Cl2 gas etching is used to locally remove the oxide mask for positive-type lithography. For negativetype lithography, the oxide mask is selectively formed on a GaAs surface by EB-stimulated oxidation. Subsequent Cl2 gas etching results in the formation of isolated quantum wells. After removing the oxide mask, overgrowth using molecular beam epitaxy is successfully carried out on the patterned surface. The cathodoluminescence image of the buried quantum well demonstrates the high quality of the resulting structure formed by this “in situ EB lithography” process. The photoluminescence intensity from the quantum well of the processed sample is proved to be the same order of magnitude compared with that from a successively grown sample, showing that the use of the oxide mask causes no serious degradation in the processed interface.

In Situ Monitoring of the Chemisorption of Hydrogen Atoms on (001) GaAs Surface in GaAs Atomic Layer Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 6A) ◽  
pp. L710-L712 ◽  
Author(s):  
Akinori Koukitu ◽  
Tetsuya Taki ◽  
Naoyuki Takahashi ◽  
Hisashi Seki
Keyword(s):  
Atomic Layer ◽  
In Situ Monitoring ◽  
Gaas Surface ◽  
Atomic Layer Epitaxy ◽  
Hydrogen Atoms

GaAs Surface Composition Investigation during Al Thin Film Growth Using the CBE Method

2010 ◽  
Vol 307 ◽  
pp. 75-83 ◽  
Author(s):  
Dmitri V. Lioubtchenko ◽  
Tatiana A. Briantseva ◽  
Z.M. Lebedeva ◽  
Tim J. Bullough
Keyword(s):  
Laser Power ◽  
Film Growth ◽  
Surface Composition ◽  
Film Formation ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Gaas Surface ◽  
Al Thin Film ◽  
Composition Changes

GaAs surface composition changes occurring during Al film growth using the CBE method with laser assistance were investigated in situ by means of laser reflectivity. The results were compared with data on precise chemical analyses and X-ray microanalyses carried out after film deposition. It was found that the peculiarity of film formation depended upon the laser power. Physicochemical interactions of the Ga atoms from the GaAs surface, with atoms and molecules from the surrounding media, are determinative reactions at a laser power of 2W. At a power of 0.02W, the laser reflectivity changes were mainly due to reactions with Al. The appearance of “free” Ga and As in the region outside of the laser spot indicated the destruction of GaAs islands weakly connected with the GaAs surface.

In-situ PR study of the confined states in AlGaAs/GaAs surface QW

2001 ◽  
Vol 227-228 ◽  
pp. 108-111 ◽  
Author(s):  
Pingping Chen ◽  
Zhonglin Miao ◽  
Wei Lu
Keyword(s):  
Gaas Surface

Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics

2018 ◽  
Vol 6 (10) ◽  
pp. 2546-2555 ◽  
Author(s):  
Juan Gao ◽  
Gang He ◽  
Shuang Liang ◽  
Die Wang ◽  
Bing Yang
Keyword(s):  
Comparative Study ◽  
Buffer Layer ◽  
Gate Dielectrics ◽  
Surface Cleaning ◽  
Gaas Surface

In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer were performed.

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