Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics

2018 ◽  
Vol 6 (10) ◽  
pp. 2546-2555 ◽  
Author(s):  
Juan Gao ◽  
Gang He ◽  
Shuang Liang ◽  
Die Wang ◽  
Bing Yang
Keyword(s):  
Comparative Study ◽  
Buffer Layer ◽  
Gate Dielectrics ◽  
Surface Cleaning ◽  
Gaas Surface

In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer were performed.

Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

Automation of Fluorescence In Situ Hybridization Pretreatment: A Comparative Study of Different Sample Types

2000 ◽  
Vol 5 (3) ◽  
pp. 209-220 ◽  
Author(s):  
KRISTINE JACOBSON ◽  
ANTHONY THOMPSON ◽  
GERRY BROWNE ◽  
CHRISTINA SHASSERRE ◽  
STEVEN A. SEELIG ◽  
...  
Keyword(s):  
In Situ Hybridization ◽  
Comparative Study ◽  
Fluorescence In Situ Hybridization

Comparative study of MoS2 and Co/MoS2 catalysts prepared by ex situ/in situ activation of ammonium and tetraalkylammonium thiomolybdates

2004 ◽  
Vol 210 (1-2) ◽  
pp. 105-117 ◽  
Author(s):  
L. Alvarez ◽  
J. Espino ◽  
C. Ornelas ◽  
J.L. Rico ◽  
M.T. Cortez ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ex Situ ◽  
In Situ Activation ◽  
Mos2 Catalysts

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface

scholarly journals Comparative study between microwave and ultrasonication aided in situ transesterification of microbial lipids

RSC Advances ◽  
2016 ◽  
Vol 6 (61) ◽  
pp. 56009-56017 ◽  
Author(s):  
Magdouli Sara ◽  
Satinder Kaur Brar ◽  
Jean François Blais
Keyword(s):  
Comparative Study ◽  
Rapid Method ◽  
Microbial Lipids ◽  
In Situ Transesterification ◽  
Recent Trends

Recent trends have focused on the development of a rapid method to convert microbial lipids to biodiesel.

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