Modelling effects of GaN HEMTs terahertz detectors with spiral antennas

2021 ◽  
Author(s):  
Zhen Huang ◽  
Wei Yan ◽  
Zhaofeng Li ◽  
Hui Dong ◽  
Fuhua Yang ◽  
...  
Keyword(s):  
Spiral Antennas ◽  
Terahertz Detectors ◽  
Gan Hemts

scholarly journals Modelling of GaN HEMTs as Terahertz Detectors Based on Self-Mixing

2016 ◽  
Vol 141 ◽  
pp. 98-102 ◽  
Author(s):  
Haowen Hou ◽  
Zhihong Liu ◽  
Jing Hua Teng ◽  
Tomás Palacio ◽  
Soo-Jin Chua
Keyword(s):  
Terahertz Detectors ◽  
Gan Hemts

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Microwave Performance of Ferroelectric-Gated GaN HEMTs

2020 ◽  
Author(s):  
Chunlei Wu ◽  
Jeffrey Smith ◽  
Suman Datta ◽  
Yu Cao ◽  
Jinqiao Xie ◽  
...  
Keyword(s):  
Gan Hemts

scholarly journals Recent Progress in the Development of Graphene Detector for Terahertz Detection

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 4987
Author(s):  
Jianlong Liu ◽  
Xin Li ◽  
Ruirui Jiang ◽  
Kaiqiang Yang ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Recent Progress ◽  
Photovoltaic Effect ◽  
Dimensional Structure ◽  
High Electron ◽  
Terahertz Waves ◽  
Terahertz Detectors ◽  
Basic Part ◽  
Suitable Material ◽  
Terahertz Region ◽  
Frequency Independent

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

2021 ◽  
pp. 106931
Author(s):  
Haiyong Wang ◽  
Wei Mao ◽  
Shenglei Zhao ◽  
Jiabo Chen ◽  
Ming Du ◽  
...  
Keyword(s):  
Reverse Blocking ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document