Surface damage of resonator of semiconductor laser controlled by light intensity enhancement

2021 ◽  
Author(s):  
Hongyang Hua ◽  
Huayu Jia
Keyword(s):  
Light Intensity ◽  
Semiconductor Laser ◽  
Surface Damage ◽  
Intensity Enhancement

scholarly journals Light intensity enhancement by diffracting structures in solar cells

2008 ◽  
Vol 104 (3) ◽  
pp. 034502 ◽  
Author(s):  
I. Tobías ◽  
A. Luque ◽  
A. Martí
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Intensity Enhancement

scholarly journals Light intensity enhancement inside the grooves of metallic gratings

2010 ◽  
Vol 27 (10) ◽  
pp. 1998 ◽  
Author(s):  
Francisco Llopis ◽  
Ignacio Tobías ◽  
Mario M. Jakas
Keyword(s):  
Light Intensity ◽  
Intensity Enhancement ◽  
Metallic Gratings

Study on Light Intensity Enhancement of ZnO/ITO/P-GaN Light-Emitting Diodes

2011 ◽  
Vol 130-134 ◽  
pp. 4084-4087
Author(s):  
Hsing Cheng Chang ◽  
Ya Hui Chen ◽  
San Shan Hung ◽  
Chi Chih Lai ◽  
Chein Chuan Hung ◽  
...  
Keyword(s):  
Light Intensity ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Light Output ◽  
Surface Roughening ◽  
Light Emitting ◽  
Intensity Enhancement ◽  
Great Performance ◽  
Output Efficiency

Light intensity enhancement of GaN-based blue light-emitting diodes (LEDs) is performed using different surface roughening technologies. Three roughening technologies are applied that contain surface roughening of p-GaN, textured indium tin oxide (ITO) on roughened p-GaN, and growing ZnO nanorods on textured ITO/p-GaN. A roughened p-GaN surface was grown on the c-plane sapphire substrate at temperature 800 °C. The morphologies of the textured LEDs with roughness in the range from 9.67 nm to 51.13 nm were observed. The light output efficiency of LED with roughened ITO layer is increased up to 73.8 %. Different dimensions of LEDs can be driven by constant injection current 20 mA without increasing threshold voltage, and larger size of ZnO/ITO/p-GaN LED shows higher luminance intensity. The LEDs with ZnO nanorods on roughened ITO/GaN have shown great performance to enhance the power conversion efficiency.

Semiconductor laser with integral light intensity detector

1979 ◽  
Vol 35 (1) ◽  
pp. 16-18 ◽  
Author(s):  
D. R. Scifres ◽  
W. Stutius
Keyword(s):  
Light Intensity ◽  
Semiconductor Laser

Light intensity pulsations in an injection locked semiconductor laser

1984 ◽  
Vol 16 (2) ◽  
pp. 183-186 ◽  
Author(s):  
F. Mogensen ◽  
G. Jacobsen ◽  
H. Olesen
Keyword(s):  
Light Intensity ◽  
Semiconductor Laser

Characteristics of light intensity enhancement of a silver nanoprism with rounded corners

2008 ◽  
Vol 229 (3) ◽  
pp. 545-550 ◽  
Author(s):  
K. YAMAGUCHI ◽  
T. INOUE ◽  
M. FUJII ◽  
T. OGAWA ◽  
Y. MATSUZAKI ◽  
...  
Keyword(s):  
Light Intensity ◽  
Intensity Enhancement
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