High-resolution 4H-SiC Schottky barrier detectors on 250 micron epitaxial layers for harsh environment applications

2021 ◽  
Author(s):  
Joshua W. Kleppinger ◽  
Omerfaruk Karadavut ◽  
Ritwik Nag ◽  
Sandeep K. Chaudhuri ◽  
Krishna C. Mandal
Keyword(s):  
High Resolution ◽  
Schottky Barrier ◽  
Harsh Environment ◽  
Epitaxial Layers ◽  
Barrier Detectors

Fabrication of High-Resolution Nuclear Detectors Using 4H-SiC n-type Epitaxial Layers

2013 ◽  
Vol 1576 ◽  
Author(s):  
Kelvin J. Zavalla ◽  
Sandeep K. Chaudhuri ◽  
Krishna C. Mandal
Keyword(s):  
High Resolution ◽  
Schottky Barrier ◽  
Collection Efficiency ◽  
Noise Analysis ◽  
Alpha Particles ◽  
Epitaxial Layers ◽  
Total Charge ◽  
Electronic Noise ◽  
System Effect ◽  
Charge Collection Efficiency

ABSTRACTHigh resolution Schottky barrier detectors for alpha particles have been fabricated on 20 μm n-type 4H-SiC epitaxial layers. Schottky barrier contact structure was accomplished by deposition of 10 nm nickel on the Si face of the epilayers. The detectors were characterized for structural, electrical, and spectroscopic properties. Scanning electron microscopy and Nomarski optical microscopy revealed a micropipe density lower than 1 cm-2. The current-voltage (I-V) characteristics of the device exhibited very low leakage current of the order of 6.5 pA at an operating bias of 90 V. C-V measurements revealed a typical effective doping concentrations of 2.4 × 1014 cm-3 in these epilayers. The detectors were evaluated for alpha particles detection using a 241Am source. An energy resolution of ∼0.98% for 5.48 MeV alpha particles was observed. The separate contribution of charge carrier drift and diffusion to the total charge collection efficiency has been calculated in these detectors following a drift-diffusion model. Detailed electronic noise analysis in terms of equivalent noise charge (ENC) was carried out to study the effect of various noise components that contribute to the total electronic noise in the detection system. Effect of shaping time, presence of source and bias on the ENC has been studied in details.

High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substrates

1990 ◽  
Vol 101 (1-4) ◽  
pp. 572-578 ◽  
Author(s):  
A.M. Keir ◽  
A. Graham ◽  
S.J. Barnett ◽  
J. Giess ◽  
M.G. Astles ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates

Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties

2018 ◽  
Vol 461 ◽  
pp. 276-280 ◽  
Author(s):  
B. Zaťko ◽  
L. Hrubčín ◽  
A. Šagátová ◽  
J. Osvald ◽  
P. Boháček ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Quality ◽  
Barrier Detectors

"Construction And Performance Of A 320 X 244-Element IR-CCD Imager With PtSi Schottky-Barrier Detectors

1989 ◽  
Author(s):  
T. S. Villani ◽  
W. F. Kosonocky ◽  
F. V. Shallcross ◽  
J. V. Groppe ◽  
G. M. Meray ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
And Performance ◽  
Barrier Detectors
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