Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers

2021 ◽  
Vol 129 (24) ◽  
pp. 244501
Author(s):  
Joshua W. Kleppinger ◽  
Sandeep K. Chaudhuri ◽  
OmerFaruk Karadavut ◽  
Krishna C. Mandal
2013 ◽  
Vol 1576 ◽  
Author(s):  
Kelvin J. Zavalla ◽  
Sandeep K. Chaudhuri ◽  
Krishna C. Mandal

ABSTRACTHigh resolution Schottky barrier detectors for alpha particles have been fabricated on 20 μm n-type 4H-SiC epitaxial layers. Schottky barrier contact structure was accomplished by deposition of 10 nm nickel on the Si face of the epilayers. The detectors were characterized for structural, electrical, and spectroscopic properties. Scanning electron microscopy and Nomarski optical microscopy revealed a micropipe density lower than 1 cm-2. The current-voltage (I-V) characteristics of the device exhibited very low leakage current of the order of 6.5 pA at an operating bias of 90 V. C-V measurements revealed a typical effective doping concentrations of 2.4 × 1014 cm-3 in these epilayers. The detectors were evaluated for alpha particles detection using a 241Am source. An energy resolution of ∼0.98% for 5.48 MeV alpha particles was observed. The separate contribution of charge carrier drift and diffusion to the total charge collection efficiency has been calculated in these detectors following a drift-diffusion model. Detailed electronic noise analysis in terms of equivalent noise charge (ENC) was carried out to study the effect of various noise components that contribute to the total electronic noise in the detection system. Effect of shaping time, presence of source and bias on the ENC has been studied in details.


2021 ◽  
Vol 15 (5) ◽  
Author(s):  
J. Pipek ◽  
M. Betušiak ◽  
E. Belas ◽  
R. Grill ◽  
P. Praus ◽  
...  

2006 ◽  
Vol 128 (34) ◽  
pp. 11260-11267 ◽  
Author(s):  
Dwight S. Seferos ◽  
Amy Szuchmacher Blum ◽  
James G. Kushmerick ◽  
Guillermo C. Bazan

1990 ◽  
Vol 101 (1-4) ◽  
pp. 572-578 ◽  
Author(s):  
A.M. Keir ◽  
A. Graham ◽  
S.J. Barnett ◽  
J. Giess ◽  
M.G. Astles ◽  
...  

2021 ◽  
Author(s):  
Pooja Bhatt ◽  
kuljeet Kaur ◽  
Jino George

Here, we observed enhancement of charge transport in 2D materials by light-matter strong coupling. Charge transport mobility is enhanced by 50 times under ON resonance condition. A clear correlation in the effective mass of the polaritonic state and Schottky barrier height may be indicating a coherent nature of light-matter interaction.<br>


2015 ◽  
Vol 229 (1-2) ◽  
Author(s):  
Yehonadav Bekenstein ◽  
Orian Elimelech ◽  
Kathy Vinokurov ◽  
Oded Millo ◽  
Uri Banin

AbstractQuantum confinement effects are observed in transport measurements of Cu


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