Optical injection of spin current in direct bandgap GeSn

2021 ◽  
Author(s):  
Gabriel Fettu ◽  
John E. Sipe ◽  
Oussama Moutanabbir
Keyword(s):  
Spin Current ◽  
Optical Injection ◽  
Direct Bandgap

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Temperature and electric field effects on the dynamic modes in a spin current auto-oscillator

2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Lina Chen ◽  
Yaoyu Gu ◽  
Kaiyuan Zhou ◽  
Zishuang Li ◽  
Liyuan Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Spin Current ◽  
Electric Field Effects ◽  
Field Effects

scholarly journals Observation of the Out‐of‐Plane Polarized Spin Current from CVD Grown WTe 2

2021 ◽  
pp. 2100038
Author(s):  
Shuyuan Shi ◽  
Jie Li ◽  
Chuang‐Han Hsu ◽  
Kyusup Lee ◽  
Yi Wang ◽  
...  
Keyword(s):  
Spin Current ◽  
Out Of Plane

Terahertz emission from CoFeB/Cr/Pt trilayers: The role of Cr as both a spin current transporter and generator

2021 ◽  
Vol 118 (23) ◽  
pp. 232401
Author(s):  
Qi Zhang ◽  
Zhuangzhuang Chen ◽  
Huafeng Shi ◽  
Xin Chen ◽  
Abhishek Talapatra ◽  
...  
Keyword(s):  
Spin Current ◽  
Terahertz Emission

scholarly journals Observation and control of the weak topological insulator state in ZrTe5

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peng Zhang ◽  
Ryo Noguchi ◽  
Kenta Kuroda ◽  
Chun Lin ◽  
Kaishu Kawaguchi ◽  
...  
Keyword(s):  
Band Gap ◽  
Topological Insulator ◽  
Spin Current ◽  
Side Surface ◽  
Quantum Spin ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Dirac Semimetal ◽  
Topological States ◽  
The One ◽  
And Control

AbstractA quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe5 will provide an excellent platform for applications.

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