Backside-illuminated single photon avalanche diode with low dark count rate

2021 ◽  
Author(s):  
Tong Chu ◽  
Tianqi Zhao ◽  
Guilan Feng ◽  
Chunlan Lin ◽  
Jinlv Pan ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Backside Illuminated

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

scholarly journals Design and Measurement of Ring-Gate Single Photon Avalanche Diode with Low Dark Count Rate

2020 ◽  
pp. 1-1
Author(s):  
Yang Wang ◽  
Xiangliang Jin ◽  
Shengguo Cao ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

scholarly journals Temperature Dependence of Dark Count Rate and After Pulsing of a Single-Photon Avalanche Diode with an Integrated Active Quenching Circuit in 0.35 μm CMOS

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Michael Hofbauer ◽  
Bernhard Steindl ◽  
Horst Zimmermann
Keyword(s):  
Temperature Dependence ◽  
Count Rate ◽  
Dead Time ◽  
Single Photon ◽  
Interarrival Time ◽  
Dark Count ◽  
Temperature Dependent ◽  
Avalanche Diode ◽  
Temperature Range ◽  
Dark Count Rate

The temperature dependence of a single-photon avalanche diode (SPAD) with an integrated quencher in 0.35 μm CMOS is investigated. While the dark count rate strongly decreases with decreasing temperature, the after-pulsing probability (APP) does not change a lot in the investigated temperature range from −40°C to 50°C, although the dead time of the active quenching circuit (AQC) is only 9.5 ns. This and the measured histograms of the interarrival time (IAT) suggest that the traps involved have a very short lifetime, which is not strongly temperature dependent, or alternatively that the traps are not the main source of after pulses in the investigated device. Consequently, it may be necessary to find another explanation for the after pulses.

Measurements and Simulations of Low Dark Count Rate Single Photon Avalanche Diode Device in a Low Voltage 180-nm CMOS Image Sensor Technology

2013 ◽  
Vol 60 (6) ◽  
pp. 1982-1988 ◽  
Author(s):  
Tomer Leitner ◽  
Amos Feiningstein ◽  
Renato Turchetta ◽  
Rebecca Coath ◽  
Steven Chick ◽  
...  
Keyword(s):  
Count Rate ◽  
Low Voltage ◽  
Single Photon ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Technology ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

scholarly journals InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

2016 ◽  
Vol 3 (3) ◽  
pp. 150584 ◽  
Author(s):  
Xiao Meng ◽  
Shiyu Xie ◽  
Xinxin Zhou ◽  
Niccolò Calandri ◽  
Mirko Sanzaro ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Timing Jitter ◽  
Single Photon Detection ◽  
Dark Count ◽  
Absorption Region ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K −1 . Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 10 8  Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

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