Radiation hard cryocooler electronics for HMWIR sensors

2021 ◽  
Author(s):  
Carl S. Kirkconnell ◽  
Mark V. Martin ◽  
Timothy Medina ◽  
Noah Hudson
Keyword(s):  
Radiation Hard

A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect

2013 ◽  
Vol E96.C (4) ◽  
pp. 511-517 ◽  
Author(s):  
Kuiyuan ZHANG ◽  
Jun FURUTA ◽  
Ryosuke YAMAMOTO ◽  
Kazutoshi KOBAYASHI ◽  
Hidetoshi ONODERA
Keyword(s):  
Flip Flop ◽  
Multiple Cell ◽  
Radiation Hard

Effect of melting atmospheres on the optical property of radiation-hard fluorophosphate glass

2021 ◽  
Author(s):  
Yuan Ma ◽  
Haiqin Su ◽  
Zhijun Zhang ◽  
Rui Wan ◽  
Shengwu Li ◽  
...  
Keyword(s):  
Optical Property ◽  
Fluorophosphate Glass ◽  
Radiation Hard

Radiation-Hard Design Principles Utilized in CMOS 8085 Microprocessor Family

1983 ◽  
Vol 30 (6) ◽  
pp. 4229-4234 ◽  
Author(s):  
W. S. Kim ◽  
T. M. Mnich ◽  
W. T. Corbett ◽  
R. K. Treece ◽  
A. E. Giddings ◽  
...  
Keyword(s):  
Design Principles ◽  
Radiation Hard

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

DESIGN, PREPRODUCTION, AND PERFORMANCE OF THE CDF RUN IIB SILICON DETECTOR

2005 ◽  
Vol 20 (16) ◽  
pp. 3811-3814
Author(s):  
◽  
PAUL LUJAN
Keyword(s):  
Building Block ◽  
Silicon Detector ◽  
Radiation Hardness ◽  
Control Signals ◽  
Lightweight Structure ◽  
And Performance ◽  
Performance Results ◽  
And Control ◽  
Radiation Hard ◽  
Detector Design

A new silicon detector was designed by the CDF collaboration for Run IIb of the Tevatron at Fermilab. The main building block of the new detector is a "supermodule" or "stave", an innovative, compact and lightweight structure of several readout hybrids and sensors with a bus cable running directly underneath the sensors to carry power, data, and control signals to and from the hybrids. The hybrids use a new, radiation-hard readout chip, the SVX4 chip. A number of SVX4 chips, readout hybrids, sensors, and supermodules were produced and tested in preproduction. The performance (including radiation-hardness) and yield of these components met or exceeded all design goals. The detector design goals, solutions, and performance results are presented.

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