Radiation Hard CMOS Sensors for Detector at High Energy Colliders

2018 ◽  
Author(s):  
Stefan Lauxtermann
Keyword(s):  
High Energy ◽  
Cmos Sensors ◽  
Radiation Hard

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics

1996 ◽  
Vol 43 (3) ◽  
pp. 1763-1767 ◽  
Author(s):  
M. Dentan ◽  
P. Abbon ◽  
E. Delagnes ◽  
N. Fourches ◽  
D. Lachartre ◽  
...  
Keyword(s):  
High Energy Physics ◽  
High Energy ◽  
Bicmos Technology ◽  
Radiation Hard ◽  
Energy Physics

Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics

1993 ◽  
Vol 40 (6) ◽  
pp. 1555-1560 ◽  
Author(s):  
M. Dentan ◽  
E. Delagnes ◽  
N. Fourches ◽  
M. Rouger ◽  
M.C. Habrard ◽  
...  
Keyword(s):  
Digital Technology ◽  
High Energy Physics ◽  
High Energy ◽  
Radiation Hard ◽  
Energy Physics

Radiation Hard Devices Based on SiC

2006 ◽  
Vol 527-529 ◽  
pp. 1473-1476 ◽  
Author(s):  
Evgenia V. Kalinina ◽  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
Nikita B. Strokan ◽  
Alexander M. Ivanov ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Signal Amplitude ◽  
High Energy ◽  
Pair Creation ◽  
Transistor Structure ◽  
Electron Hole ◽  
X Ray ◽  
Electron Hole Pair ◽  
Radiation Hard ◽  
High Energy Particles

The effect of irradiation with protons, electrons, neutrons, x-ray radiation and gamma-ray photons as well as with different ions on properties of starting SiC material and devices based on it was studied. The rectifying properties of the diode structures, which degraded as a result of irradiation with high energy particles, were recovered at higher operation temperatures. The transistor structure SiC-based detectors were realized with the signal amplification by a factor of tens under irradiation. The energy resolution of 0.34 %, commensurable with Si-detectors, has been achieved for SiC detectors and is correct for all classes of short range ions. The maximum signal amplitude corresponds, in SiC, to a mean electron-hole pair creation energy of 7.7 eV.

scholarly journals X-Ray measurements of radiation hard monolithic CMOS sensors at Diamond Light Source

2020 ◽  
Author(s):  
Maria Mironova ◽  
Kaloyan Metodiev ◽  
Philip Patrick Allport ◽  
Ivan Berdalović ◽  
Daniela Bortoletto ◽  
...  
Keyword(s):  
Light Source ◽  
X Ray ◽  
Cmos Sensors ◽  
Radiation Hard

scholarly journals LOW-MASS RADIATION-HARD BEAM PROFILE MONITORS FOR HIGH ENERGY PROTONS USING MICROFABRICATED METALTHIN-FILMS

2021 ◽  
Author(s):  
Didier Bouvet ◽  
Jacopo Bronuzzi ◽  
Blerina Gkotse ◽  
Georgi Gorine ◽  
Alessandro Mapell ◽  
...  
Keyword(s):  
High Energy ◽  
Beam Profile ◽  
Low Mass ◽  
Radiation Hard

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

2022 ◽  
Author(s):  
Andrei Ivanovich Titov ◽  
Konstantin Karabeshkin ◽  
Andrei Struchkov ◽  
Platon Karaseov ◽  
Alexander Azarov
Keyword(s):  
Defect Formation ◽  
Deep Understanding ◽  
Structural Disorder ◽  
High Energy ◽  
Radiation Tolerance ◽  
Defect Annealing ◽  
Argon Ions ◽  
Fluorine Ions ◽  
Radiation Hard ◽  
Crystal Bulk

Abstract Realization of radiation-hard electronic devices able to work in harsh environments requires deep understanding the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates defect formation in the crystal bulk. Furthermore, the balance between these two processes depends on implanted species. In particular, strong damage enhancement leading to the complete GaN bulk amorphization observed for the samples pre-implanted with fluorine ions, whereas the co-irradiation of the samples pre-implanted with such elements as neon, phosphorus, and argon ions leads to a decrease of the damage.

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