Plasma etch solutions for EUV patterning: defect challenges

2021 ◽  
Author(s):  
Noel Sun ◽  
Naveed Ansari ◽  
Ratndeep Srivastava ◽  
Yoshie Kimura ◽  
Gowri Kamarthy
Keyword(s):  
Plasma Etch ◽  
Patterning Defect

Novel multi-alicyclic polymers for enhancing plasma etch resistance in 193 nm lithography

Polymer ◽  
2001 ◽  
Vol 42 (4) ◽  
pp. 1757-1761 ◽  
Author(s):  
Jai-Hyong Lee ◽  
Kwang-Duk Ahn ◽  
Iwhan Cho
Keyword(s):  
Plasma Etch ◽  
193 Nm

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface

1998 ◽  
Vol 65-66 ◽  
pp. 291-0 ◽  
Author(s):  
Y.B. Kim ◽  
Mikhail R. Baklanov ◽  
Thierry Conard ◽  
Serge Vanhaelemeersch ◽  
W. Vandervorst
Keyword(s):  
Silicon Surface ◽  
Plasma Etch ◽  
Fluorocarbon Plasma

Development of nanocomposite resists with high plasma etch resistance

2007 ◽  
Author(s):  
Chunwei Chen ◽  
Hong Zhuang ◽  
Ping-Hung Lu ◽  
Mark Neisser ◽  
Georg Pawlowski
Keyword(s):  
High Plasma ◽  
Plasma Etch
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