Design of electrically pumped sub-micron lasers on patterned SOI substrates

Double SOI substrates for Advanced Technologies

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320657 ◽

2019 ◽

Author(s):

W. Schwarzenbach ◽

G. Besnard ◽

G. Chabanne ◽

B.-Y. Nguyen

Keyword(s):

Advanced Technologies ◽

Soi Substrates

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Room temperature electrically pumped topological insulator lasers

Nature Communications ◽

10.1038/s41467-021-23718-4 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Jae-Hyuck Choi ◽

William E. Hayenga ◽

Yuzhou G. N. Liu ◽

Midya Parto ◽

Babak Bahari ◽

...

Keyword(s):

Topological Insulator ◽

Room Temperature ◽

Phase Locking ◽

Quantum Spin ◽

Single Frequency ◽

Laser Array ◽

Quantum Spin Hall Effect ◽

Electrically Pumped ◽

Spatially Extended ◽

Synthetic Gauge Fields

AbstractTopological insulator lasers (TILs) are a recently introduced family of lasing arrays in which phase locking is achieved through synthetic gauge fields. These single frequency light source arrays operate in the spatially extended edge modes of topologically non-trivial optical lattices. Because of the inherent robustness of topological modes against perturbations and defects, such topological insulator lasers tend to demonstrate higher slope efficiencies as compared to their topologically trivial counterparts. So far, magnetic and non-magnetic optically pumped topological laser arrays as well as electrically pumped TILs that are operating at cryogenic temperatures have been demonstrated. Here we present the first room temperature and electrically pumped topological insulator laser. This laser array, using a structure that mimics the quantum spin Hall effect for photons, generates light at telecom wavelengths and exhibits single frequency emission. Our work is expected to lead to further developments in laser science and technology, while opening up new possibilities in topological photonics.

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Terahertz emission from electrically pumped gallium doped silicon devices

Applied Physics Letters ◽

10.1063/1.1808878 ◽

2004 ◽

Vol 85 (17) ◽

pp. 3660-3662 ◽

Cited By ~ 23

Author(s):

P.-C. Lv ◽

R. T. Troeger ◽

S. Kim ◽

S. K. Ray ◽

K. W. Goossen ◽

...

Keyword(s):

Terahertz Emission ◽

Silicon Devices ◽

Electrically Pumped ◽

Doped Silicon

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Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

Chinese Physics Letters ◽

10.1088/0256-307x/26/6/064211 ◽

2009 ◽

Vol 26 (6) ◽

pp. 064211 ◽

Cited By ~ 10

Author(s):

Chen Ting ◽

Hong Tao ◽

Pan Jiao-Qing ◽

Chen Wei-Xi ◽

Cheng Yuan-Bing ◽

...

Keyword(s):

Room Temperature ◽

Metal Bonding ◽

Hybrid Lasers ◽

Electrically Pumped

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Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications

Microelectronic Engineering ◽

10.1016/j.mee.2005.07.042 ◽

2005 ◽

Vol 82 (3-4) ◽

pp. 454-459 ◽

Cited By ~ 5

Author(s):

S. Zimmermann ◽

Q.T. Zhao ◽

B. Trui ◽

M. Wiemer ◽

C. Kaufmann ◽

...

Keyword(s):

Fabrication And Characterization ◽

Soi Substrates

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Terahertz-wave generation using graphene

MRS Proceedings ◽

10.1557/opl.2012.1186 ◽

2012 ◽

Vol 1437 ◽

Author(s):

Taiichi Otsuji ◽

Stephane Boubanga Tombet ◽

Akira Satou ◽

Maxim Ryzhii ◽

Victor Ryzhii

Keyword(s):

Terahertz Wave ◽

Wave Generation ◽

Nonequilibrium Carrier ◽

Terahertz Range ◽

Two Dimensional ◽

Carrier Relaxation ◽

Dynamic Conductivity ◽

Electrically Pumped ◽

Terahertz Lasers ◽

Recombination Dynamics

ABSTRACTIn this paper recent advances in terahertz-wave generation in graphene are reviewed. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene is described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.

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Design of a MEMS Resonant Wind Sensor on Airplane Wing

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.562-565.436 ◽

2013 ◽

Vol 562-565 ◽

pp. 436-440

Author(s):

Chao Wei Si ◽

Guo Wei Han ◽

Jin Ning ◽

Wei Wei Zhong ◽

Fu Hua Yang

Keyword(s):

High Vacuum ◽

Pressure Change ◽

Wind Pressure ◽

Damping Factor ◽

Deep Reactive Ion Etching ◽

Mems Resonator ◽

Mems Resonators ◽

Element Simulation ◽

Airplane Wing ◽

Soi Substrates

A new kind of wind sensor made up of MEMS resonators is designed in the paper capable of sensing the lift, the resistance and the turbulence of airplane wings by mounting on the surface. The designed wind sensor is made up of four MEMS wind pressure gauges fixed around a square wind resistance block which used to block the wind to change the wind pressure on the surface, and the change of wind pressure is detected by MEMS wind pressure gauges to reveal the air condition on the surface of the airplane wings. As known, a MEMS resonator is a second-order resonant system whose damping factor is mainly dependent on the air pressure, and the characteristic is often used to detecting the airtightness of a sealed chamber for the damping factor is sensitive under high vacuum, while a MEMS resonator with the damping factor sensitive at atmospheric pressure is designed in this paper for sensing wind pressure change, and the MEMS resonator is manufactured on SOI substrates with deep reactive ion etching technology. Also relations between the wind pressure change and the wind speed around a block at atmosphere is revealed by finite element simulation. Compared to traditional wind sensors such as anemometers and Venturi tubes, the designed MEMS wind sensor with a very small size is suitable to mount on different zones of a wing with a large amount to monitor the air condition and have less influence on air flow.

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