Enabling EUV pattern transfer by optimized under layer

2021 ◽  
Author(s):  
Soichiro Okada ◽  
Keisuke Yoshida ◽  
Satoru Shimura
Keyword(s):  
Pattern Transfer

Moldability improvement in microinjection molding via film lamination

2021 ◽  
pp. 096739112098650
Author(s):  
Dah Hee Kim ◽  
Young Seok Song
Keyword(s):  
Heat Transfer ◽  
Light Guide ◽  
Wall Slip ◽  
Skin Layer ◽  
Pattern Transfer ◽  
Plastic Plate ◽  
Resin Infusion ◽  
Microinjection Molding ◽  
Insulation Effect ◽  
Thin Plastic

The purpose of this study is to integrate a polymeric film onto a mold to impede thermal heat transfer during resin infusion. A thin plastic plate was fabricated by using microinjection molding. A polyimide (PI) film was laminated onto a mold in an effort to produce a thin light guide plate (LGP). The film could decelerate the solidification of molten polymer in the cavity of mold and enhance the wall slip of resin on the mold. The insulation effect was modeled numerically. The surface roughness and pattern transfer characteristics of the LGP were evaluated. It was found that the fluidity of the resin increased due to the decreased skin layer during mold filling. The results showed that the strategy proposed in this study could help decrease the thickness of LGP effectively when manufacturing the part via injection molding.

scholarly journals Investigation of Thick-Film-Paste Rheology and Film Material for Pattern Transfer Printing (PTP) Technology

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 108
Author(s):  
Adrian Adrian ◽  
Dominik Rudolph ◽  
Jan Lossen ◽  
Norbert Willenbacher
Keyword(s):  
Solar Cell ◽  
Aspect Ratio ◽  
Yield Stress ◽  
Laser Power ◽  
Light Transmission ◽  
Pattern Transfer ◽  
Volatile Components ◽  
Film Material ◽  
Transfer Printing ◽  
Power Threshold

Steady cost pressure in silicon solar cell production leads to a continuous reduction of silver consumption per cell. Pattern Transfer Printing (PTP) technology enables to reduce silver consumption by depositing smaller front electrodes on solar cells. Here, we aim at a better understanding of the laser deposition process. The aspect ratio of printed lines improved with increasing paste yield stress but was lower than the theoretical aspect ratio for a given trench geometry, suggesting that line spreading was caused by the pressure that was due to the vaporization of volatile paste components and a yield stress reduction that was due to local paste heating. A low laser power threshold, mandatory to fabricate narrow electrodes with a high aspect ratio and low amount of debris, could be achieved using pastes with low boiling temperature of volatile components and poor wetting between paste and film. The material with the lowest light transmission exhibited the lowest laser power threshold. We attribute this to the weaker adhesion to the paste and a better alignment with the laser focal plane. Our results provide valuable guidelines for paste and film material design aimed at narrower electrodes, with a higher aspect ratio to be obtained at an even lower laser power threshold in PTP-based solar cell metallization.

Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain

1998 ◽  
Vol 512 ◽  
Author(s):  
Hyun Cho ◽  
T. Maeda ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abemathy ◽  
...  
Keyword(s):  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Etch Rates ◽  
Coupled Plasmas

ABSTRACTAnisotropic pattern transfer has been performed for GaN, InN and AIN in Cl2/Ar, BI3/Ar and BBr3/Ar Inductively Coupled Plasmas(ICP). Controlled etch rates in the range of 500–1500Å·min−1 are obtained for III-nitride materials in Cl2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AIN in the BI3 mixtures, while for BBr3 discharges values of 100:1 for InN over AIN and 25:1 for InN over GaN were measured.

Pattern transfer of directed self-assembly patterns for CMOS device applications

2013 ◽  
Vol 12 (4) ◽  
pp. 041305 ◽  
Author(s):  
Hsin-Yu Tsai ◽  
Hiroyuki Miyazoe ◽  
Sebastian Engelmann ◽  
Chi-Chun Liu ◽  
Lynne Gignac ◽  
...  
Keyword(s):  
Self Assembly ◽  
Pattern Transfer ◽  
Device Applications

Three-dimensional pattern transfer on quartz substrates

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1463-1466 ◽  
Author(s):  
K. Mohamed ◽  
M.M. Alkaisi
Keyword(s):  
Three Dimensional ◽  
Pattern Transfer ◽  
Quartz Substrates

Dynamic Maskless Holographic Lithography

2007 ◽  
Author(s):  
Nathan J. Jenness ◽  
Kurt D. Wulff ◽  
Matthew S. Johannes ◽  
Daniel G. Cole ◽  
Robert L. Clark
Keyword(s):  
Cell Patterning ◽  
Pattern Transfer ◽  
Holographic Lithography ◽  
Single Shot ◽  
Recent Application ◽  
Nanoscale Structures ◽  
Maskless Patterning ◽  
Phase Holograms

Maskless patterning techniques are increasingly implemented in semiconductor research and manufacturing eliminating the need for costly masks or masters. Recent application of these techniques to DNA and cell patterning demonstrates the adaptability of maskless processes. In this paper we present a new lithographic process for dynamically reconfiguring and arbitrarily positioning computer-generated patterns through the use of phase holograms. Similar to current maskless patterning methods this process can achieve pattern transfer through serially tracing an image onto a substrate. The novelty of our process, however, lies in the ability to rapidly fabricate complex micro/nanoscale structures through single-shot exposure of a substrate.

Microscale pattern transfer without photolithography of substrates

2005 ◽  
Vol 51 (5) ◽  
pp. 809-819 ◽  
Author(s):  
I. Schönenberger ◽  
S. Roy
Keyword(s):  
Pattern Transfer

Contrast enhancement pattern transfer etching of phosphorus‐doped polycrystalline silicon

1987 ◽  
Vol 51 (17) ◽  
pp. 1328-1330 ◽  
Author(s):  
N. Hayasaka ◽  
H. Nakahara ◽  
H. Okano ◽  
Y. Horiike
Keyword(s):  
Contrast Enhancement ◽  
Polycrystalline Silicon ◽  
Pattern Transfer ◽  
Enhancement Pattern ◽  
Phosphorus Doped
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