Design-technology co-optimization of sequential and monolithic CFET as enabler of technology node beyond 2nm

2021 ◽  
Author(s):  
Bilal Chehab ◽  
Julien Ryckaert ◽  
Pieter Schuddinck ◽  
Pieter Weckx ◽  
Naoto Horiguchi ◽  
...  
Keyword(s):  
Design Technology ◽  
Technology Node

Design Capability for Science-based Innovation

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
ROTHKÖTTER Stefanie ◽  
Craig C. GARNER ◽  
Sándor VAJNA
Keyword(s):  
Literature Review ◽  
Scientific Discovery ◽  
New Technology ◽  
Academic Research ◽  
Research Interest ◽  
Design Practice ◽  
Design Technology ◽  
Innovation Potential ◽  
Design Integration ◽  
Cultural Constraints

In light of a growing research interest in the innovation potential that lies at the inter­section of design, technology, and science, this paper offers a literature review of design initiatives centered on scientific discovery and invention. The focus of this paper is on evidence of design capabilities in the academic research environment. The results are structured along the Four Orders of Design, with examples of design-in-science initiatives ranging from (1) the design of scientific figures and (2) laboratory devices using new technology to (3) interactions in design workshops for scientists and (4) inter­disciplinary design labs. While design capabilities have appeared in all four orders of design, there are barriers and cultural constraints that have to be taken into account for working at or researching these creative intersections. Modes of design integration and potentially necessary adaptations of design practice are therefore also highlighted.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

Requirements Analysis and Design Technology Report.

1994 ◽  
Author(s):  
Ralph Ganska ◽  
John Grotzky ◽  
Jack Rubinstein ◽  
Jim Van Buren ◽  
Shane Atkinson
Keyword(s):  
Requirements Analysis ◽  
Design Technology ◽  
Analysis And Design

Requirements Engineering and Design Technology Report,

1995 ◽  
Author(s):  
Ralph Ganska ◽  
John Grotzky ◽  
Jack Rubinstein ◽  
Jim Van Buren ◽  
Gary Petersen
Keyword(s):  
Requirements Engineering ◽  
Design Technology

An application-based approach to the teaching of design technology

1989 ◽  
Vol 1989 (2) ◽  
pp. 6
Author(s):  
Peter M. Threlfall ◽  
Paul H. Riley
Keyword(s):  
Design Technology

scholarly journals A complex systems perspective on computer-supported collaborative design technology

2002 ◽  
Vol 45 (11) ◽  
pp. 27-31 ◽  
Author(s):  
Mark Klein ◽  
Hiroki Sayama ◽  
Peyman Faratin ◽  
Yaneer Bar-Yam
Keyword(s):  
Complex Systems ◽  
Collaborative Design ◽  
Design Technology ◽  
Systems Perspective

scholarly journals CDM Protection Test Structure for I/O Cells in a Submicronic Technology

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 443
Author(s):  
Mihaela-Daniela Dobre ◽  
Philippe Coll ◽  
Gheorghe Brezeanu
Keyword(s):  
Electrostatic Discharge ◽  
New Technology ◽  
Test Chip ◽  
Technology Node ◽  
Ground Resistance ◽  
Maximum Resistance ◽  
Device Model ◽  
Protection Method ◽  
Esd Protection ◽  
Protection Devices

This paper proposes an investigation of a CDM (charge device model) electrostatic discharge (ESD) protection method used in submicronic input–output (I/O) structures. The modeling of the commonly used ESD protection devices as well as the modeling of the breakdown caused by ESD is not accurate using traditional commercial tools, hence the need for test-chip implementation, whenever a new technology node is used in production. The proposed method involves defining, implementing, testing, and concluding on one test-chip structure named generically “CDM ground resistance”. The structure assesses the maximum ground resistance allowed for the considered technology for which CDM protection is assured. The findings are important because they will be actively used as CDM protection for all I/O structures developed in the considered submicronic technology node. The paper will conclude on the constraints in terms of maximum resistance of ground metal track allowed to be CDM protected.

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