Analysis of various solvent effects to quantum dots for bilayer quantum dot light-emitting diode

Author(s):  
Jae-In Yoo ◽  
Suk-Ho Song ◽  
Jae-Peel Chung ◽  
Zhang Yi ◽  
Sung-Jae Park ◽  
...  
Author(s):  
JaeIn Yoo ◽  
Suk-Ho Song ◽  
Jae-Peel Jung ◽  
Zhang Yi ◽  
Sung-Jae Park ◽  
...  

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.


Nanoscale ◽  
2021 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Xiaochuan Zhou ◽  
Fan Cao ◽  
Xuyong Yang ◽  
...  

Blue ZnSe/ZnS/ZnS quantum dots were prepared using a seed-mediated and double shell strategy, and the quantum dot-based light-emitting diode with electroluminescence spectrum peaked at 446 nm and full widths at half-maximum of 16 nm was fabricated.


2013 ◽  
Vol 5 (14) ◽  
pp. 6535-6540 ◽  
Author(s):  
Kheng Swee Leck ◽  
Yoga Divayana ◽  
Dewei Zhao ◽  
Xuyong Yang ◽  
Agus Putu Abiyasa ◽  
...  

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.


2012 ◽  
Vol 20 (2) ◽  
Author(s):  
S. Pickering ◽  
A. Kshirsagar ◽  
J. Ruzyllo ◽  
J. Xu

AbstractIn this experiment a technique of mist deposition was explored as a way to form patterned ultra-thin-films of CdSe/ZnS core/shell nanocrystalline quantum dots using colloidal solutions. The objective of this study was to investigate the feasibility of mist deposition as a patterning method for creating multicolour quantum dot light emitting diodes. Mist deposition was used to create three rows of quantum dot light emitting diodes on a single device with each row having a separate colour. The colours chosen were red, green and yellow with corresponding peak wavelengths of 620 nm, 558 nm, and 587 nm. The results obtained from this experiment show that it is possible to create multicolour devices on a single substrate. The peak brightnesses obtained in this experiment for the red, green, and yellow were 508 cd/m, 507 cd/m, and 665 cd/m, respectively. The similar LED brightness is important in display technologies using colloidal quantum dots in a precursor solution to ensure one colour does not dominate the emitted spectrum. Results obtained in-terms of brightness were superior to those achieved with inkjet deposition. This study has shown that mist deposition is a viable method for patterned deposition applied to quantum dot light emitting diode display technologies.


Nanoscale ◽  
2015 ◽  
Vol 7 (12) ◽  
pp. 5363-5370 ◽  
Author(s):  
Jong-Hoon Kim ◽  
Ki-Heon Lee ◽  
Hee-Don Kang ◽  
Byoungnam Park ◽  
Jun Yeon Hwang ◽  
...  

A bicolored white quantum dot-light-emitting diode has been demonstrated using a unique QD combination of blue CdZnS/ZnS and yellow Cu–In–S/ZnS.


Author(s):  
Joon Hee Jo ◽  
Seung Jun Lee ◽  
Ho Seok Heo ◽  
Kangtaek Lee

The low stability of InP-based quantum dots (QDs) under high temperature and humidity is a major obstacle to their practical applications and commercialization. Herein, we report on the stability enhancement...


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