scholarly journals Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers

2013 ◽  
Vol 5 (14) ◽  
pp. 6535-6540 ◽  
Author(s):  
Kheng Swee Leck ◽  
Yoga Divayana ◽  
Dewei Zhao ◽  
Xuyong Yang ◽  
Agus Putu Abiyasa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Hole Transporting

All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Shell Growth ◽  
Solution Processed ◽  
Light Emitting ◽  
Long Lifetime

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7281-7290 ◽  
Author(s):  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Copper Nickel ◽  
Hole Transporting

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs) by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to improve hole injection.

A seed-mediated and double shell strategy to realize large-size ZnSe/ZnS/ZnS quantum dots for high color purity blue light-emitting diodes

Nanoscale ◽  
2021 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Xiaochuan Zhou ◽  
Fan Cao ◽  
Xuyong Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diode ◽  
Electroluminescence Spectrum ◽  
Color Purity ◽  
Half Maximum ◽  
Light Emitting ◽  
Large Size ◽  
Seed Mediated ◽  
High Color Purity

Blue ZnSe/ZnS/ZnS quantum dots were prepared using a seed-mediated and double shell strategy, and the quantum dot-based light-emitting diode with electroluminescence spectrum peaked at 446 nm and full widths at half-maximum of 16 nm was fabricated.

Hybrid White Quantum Dot-Organic Light-Emitting Diodes with Highly Stable CIEx,y Coordinates by Introduction of n-Type Modulation and Multi-Stacked Hole Transporting Layer

2021 ◽  
Author(s):  
Hakjun Lee ◽  
Seung-Won Song ◽  
Kyo Min Hwang ◽  
Ki Ju Kim ◽  
Heesun Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Organic Light Emitting Diodes ◽  
Device Structure ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Device Architecture ◽  
Organic Light ◽  
Hole Transporting ◽  
Novel Concept

Extremely stable white emission out of a hybrid white quantum dot-organic light-emitting diode (WQD-OLED) was achieved by developing a novel concept of device architecture. The new inverted device structure employs...

GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices

2012 ◽  
Vol 20 (2) ◽  
Author(s):  
S. Pickering ◽  
A. Kshirsagar ◽  
J. Ruzyllo ◽  
J. Xu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Precursor Solution ◽  
Colloidal Quantum Dots ◽  
Colloidal Solutions ◽  
Light Emitting ◽  
Mist Deposition ◽  
Viable Method

AbstractIn this experiment a technique of mist deposition was explored as a way to form patterned ultra-thin-films of CdSe/ZnS core/shell nanocrystalline quantum dots using colloidal solutions. The objective of this study was to investigate the feasibility of mist deposition as a patterning method for creating multicolour quantum dot light emitting diodes. Mist deposition was used to create three rows of quantum dot light emitting diodes on a single device with each row having a separate colour. The colours chosen were red, green and yellow with corresponding peak wavelengths of 620 nm, 558 nm, and 587 nm. The results obtained from this experiment show that it is possible to create multicolour devices on a single substrate. The peak brightnesses obtained in this experiment for the red, green, and yellow were 508 cd/m, 507 cd/m, and 665 cd/m, respectively. The similar LED brightness is important in display technologies using colloidal quantum dots in a precursor solution to ensure one colour does not dominate the emitted spectrum. Results obtained in-terms of brightness were superior to those achieved with inkjet deposition. This study has shown that mist deposition is a viable method for patterned deposition applied to quantum dot light emitting diode display technologies.

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