Thickness uniformity and stability of amorphous selenium films on flexible substrates for indirect conversion x-ray detection

2021 ◽  
Author(s):  
Maryam Farahmandzadeh ◽  
Steven Marcinko ◽  
Davide Curreli ◽  
Shiva Abbaszadeh
Keyword(s):  
Amorphous Selenium ◽  
Flexible Substrates ◽  
X Ray ◽  
Thickness Uniformity ◽  
Selenium Films

Light-induced changes in amorphous selenium films containing Sb additives

1999 ◽  
Vol 4 (0) ◽  
pp. 99-101
Author(s):  
V. I. Mikla ◽  
I. P. Mikhalko ◽  
V. V. Mikla ◽  
Yu. Yu. Nagy
Keyword(s):  
Amorphous Selenium ◽  
Selenium Films ◽  
Induced Changes

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

Retrieval of optical constants of undoped amorphous selenium films from an analysis of their normal-incidence transmittance spectra using numeric PUMA method

2015 ◽  
Vol 27 (4) ◽  
pp. 3281-3291 ◽  
Author(s):  
Mousa M. Abdul-Gader Jafar ◽  
Mahmoud H. Saleh ◽  
Mais Jamil A. Ahmad ◽  
Basim N. Bulos ◽  
Tariq M. Al-Daraghmeh
Keyword(s):  
Optical Constants ◽  
Normal Incidence ◽  
Amorphous Selenium ◽  
Transmittance Spectra ◽  
Selenium Films

Deep intrinsic and photostructural defect levels in amorphous selenium films

1991 ◽  
Vol 70 (9) ◽  
pp. 5122-5124 ◽  
Author(s):  
Suresh Chand ◽  
R. C. Bhatheja ◽  
G. D. Sharma ◽  
Subhas Chandra
Keyword(s):  
Amorphous Selenium ◽  
Selenium Films ◽  
Defect Levels

X-ray imaging with amorphous selenium: Optimal spectra for digital mammography

1996 ◽  
Vol 23 (4) ◽  
pp. 557-567 ◽  
Author(s):  
Rebecca Fahrig ◽  
J. A. Rowlands ◽  
Martin J. Yaffe
Keyword(s):  
Digital Mammography ◽  
Amorphous Selenium ◽  
X Ray ◽  
X Ray Imaging

Precise Control of Thickness Uniformity in Mo/Si Soft X-Ray Multilayer

2011 ◽  
Vol 31 (11) ◽  
pp. 1131001 ◽  
Author(s):  
朱亚丹 Zhu Yadan ◽  
方明 Fang Ming ◽  
易葵 Yi Kui
Keyword(s):  
X Ray ◽  
Thickness Uniformity ◽  
Precise Control
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