Reutilization of CdZnTe substrate technology for HgCdTe IRFPA detector

2020 ◽  
Author(s):  
Chunling Li ◽  
Qian Li
Keyword(s):  
Cdznte Substrate

High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate

2015 ◽  
Vol 44 (8) ◽  
pp. 2762-2767
Author(s):  
Priyanthi M. Amarasinghe ◽  
Syed B. Qadri ◽  
Priyalal S. Wijewarnasuriya
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
Cdznte Substrate ◽  
X Ray

Growth of High Quality Lwir Films by Liquid Phase Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
Dipankar Chandra
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
Substrate Surface ◽  
Electrical Performance ◽  
Cdznte Substrate ◽  
Long Wavelength ◽  
Indium Doping ◽  
Dislocation Densities ◽  
Infra Red

ABSTRACTGrowth of long wavelength infra-red mercury cadmium telluride films by liquid phase epitaxy has usually yielded films of inferior electrical properties as evidenced by Hall mobilities lower than theoretical values by factors of 5 or more at 77°K. In addition the Hall behavior over the entire temperature range did not follow classical patterns. A systematic series of investigations was conducted to improve the electrical performance of these films by four methods: i) growth of HgCdZnTe films, where a portion of the cadmium was replaced by zinc, ii) growth at temperatures > 550°C, iii) growth at a slow rate on a CdZnTe substrate following ‘Cleaning’ in the melt of the substrate surface and iv) doping the film by controlled levels of indium. The first method did not lead to any improvements in the Hall behavior. In addition, the films grown displayed varying dislocation densities. The second method led to a small but definite increase in the yield of non-anomalous or classical films (5%). The third method yielded films with classical or non-anomalous Hall behavior about 20% of the time. The last method consistently led to films with classical Hall behavior. This was accomplished with indium doping levels at 1.5× 1014/cm3. Preliminary data indicate that it will be possible to go to still lower doping levels while maintaining classical Hall behavior. The improvement in electrical properties of these epifilms can be attributed to the reduction or elimination of type inhomogeneities known to degrade Hall mobilities in films grown by liquid phase epitaxy.

CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe

1995 ◽  
Vol 24 (5) ◽  
pp. 497-504 ◽  
Author(s):  
J. P. Tower ◽  
S. P. Tobin ◽  
M. Kestigian ◽  
P. W. Norton ◽  
A. B. Bollong ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Cdznte Substrate

Radiation induced luminescence of the CdZnTe substrate in HgCdTe detectors for WFC3

2005 ◽  
Author(s):  
Augustyn Waczynski ◽  
Paul W. Marshall ◽  
Cheryl J. Marshall ◽  
Roger Foltz ◽  
Randy A. Kimble ◽  
...  
Keyword(s):  
Cdznte Substrate ◽  
Radiation Induced

As-Received CdZnTe Substrate Contamination

2015 ◽  
Vol 44 (9) ◽  
pp. 3082-3091 ◽  
Author(s):  
J. D. Benson ◽  
L. O. Bubulac ◽  
M. Jaime-Vasquez ◽  
C. M. Lennon ◽  
P. J. Smith ◽  
...  
Keyword(s):  
Cdznte Substrate

FAR-INFRARED MAGNETOABSORPTION STUDIES OF HGMNTE QUANTUM WELLS GROWN ON CDZNTE SUBSTRATE

2003 ◽  
Author(s):  
C.-M. HU ◽  
D. HEITMANN ◽  
R. WINKLER ◽  
C.R. BECKER ◽  
Y.-S. GUI ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Cdznte Substrate

Influence of the CdZnTe Substrate Thickness on the Response of HgCdTe Detectors Under Irradiation: Modeling of the Substrate Luminescence

2020 ◽  
Vol 49 (11) ◽  
pp. 6918-6935
Author(s):  
Thibault Pichon ◽  
Salima Mouzali ◽  
Olivier Boulade ◽  
Olivier Gravrand ◽  
Olivier Limousin
Keyword(s):  
Substrate Thickness ◽  
Cdznte Substrate

Progress in CdZnTe substrate producibility and critical drivers of IRFPA yield originating with CdZnTe substrates

1998 ◽  
Vol 27 (6) ◽  
pp. 564-572 ◽  
Author(s):  
S. L. Price ◽  
H. L. Hettich ◽  
S. Sen ◽  
M. C. Currie ◽  
D. R. Rhiger ◽  
...  
Keyword(s):  
Cdznte Substrate ◽  
Cdznte Substrates
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