Nanoscale dopant profiling in InGaN/GaN core-shell wires by capacitance voltage measurement

2021 ◽  
Author(s):  
Timothée Lassiaz ◽  
Pierre Tchoulfian ◽  
Fabrice Donatini ◽  
Julien Brochet ◽  
Romain Parize ◽  
...  
Keyword(s):  
Core Shell ◽  
Voltage Measurement ◽  
Dopant Profiling ◽  
Capacitance Voltage

scholarly journals Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance–Voltage Measurement

Nano Letters ◽  
2021 ◽  
Author(s):  
Timothée Lassiaz ◽  
Pierre Tchoulfian ◽  
Fabrice Donatini ◽  
Julien Brochet ◽  
Romain Parize ◽  
...  
Keyword(s):  
Voltage Measurement ◽  
Dopant Profiling ◽  
Capacitance Voltage

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

scholarly journals Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Electrical Response ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Voltage Measurement ◽  
Deep Traps ◽  
Cds Thin Film ◽  
Depth Analysis ◽  
Capacitance Voltage

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement

2013 ◽  
Vol 103 (3) ◽  
pp. 033512 ◽  
Author(s):  
G. Chen ◽  
A. M. Hoang ◽  
S. Bogdanov ◽  
A. Haddadi ◽  
P. R. Bijjam ◽  
...  
Keyword(s):  
Type Ii ◽  
Voltage Measurement ◽  
Capacitance Voltage
Sign in / Sign up

Export Citation Format

Share Document