Versatility of metal organic chemical vapor deposition process for fabrication of high-quality YBCO superconducting thin films

1991 ◽  
Author(s):  
Chyi S. Chern ◽  
Jing-Fu Zhao ◽  
Y. Q. Li ◽  
Peter E. Norris ◽  
B. H. Kear ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Superconducting Thin Films ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-Organic Chemical Vapor Deposition of Epitaxial Tl2Ba2Ca2Cu3O10−x Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
Bruce J. Hinds ◽  
Jon L. Schindler ◽  
Bin Han ◽  
Deborah A. Neumayer ◽  
Donald C. Degroot ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Superconducting Thin Films ◽  
X Ray ◽  
Partial Pressures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSuperconducting thin films of Tl2Ba2Ca2Cu3O10−x (TL-2223) have been grown on single crystal (110) LaAlO3 using a two-step process. Ba2Ca2Cu3Ox precursor films are deposited via metal-organic chemical vapor deposition (MOCVD) in a horizontal hot walled reactor. The second generation precursors Ba(hfa)2•tet, Ca(hfa)2•tet, and Cu(hfa)2 (hfa = hexafluoroacetylacetonate, tet = tetraglyme) were used as volatile metal sources due to their superior volatility and stability. Tl was introduced into the film via a high temperature post anneal in the presence of a Tl2O3:BaO:CaO:CuO pellet (1:2:2:3 ratio). Low O2 partial pressures were used to reduce the temperature in which the TI-2223 phase forms and to improve the surface morphology associated with a liquid phase intermediate. Films are highly oriented with the c-axis perpendicular to the substrate and a-b axis epitaxy is seen from x-ray φ- scans. The best films have a resistively measured Tc of 115K and a magnetically derived Jc of 6×105 A/cm2 (77K, 0 T). Preliminary surface resistance measurements, using parallel plate techniques, give Rs = 0.35 mΩ at 5K (ω = 10 GHz).

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2839-2842 ◽  
Author(s):  
Jeong Hoon Park ◽  
Kug Sun Hong ◽  
Woon Jo Cho ◽  
Jang-Hoon Chung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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