Large-area nanometer-thin β-Ga2O3 films synthesized via oxide printing of liquid metal gallium

2020 ◽  
Author(s):  
Jacqueline Cooke ◽  
Leila Ghadbeigi ◽  
Rujun Sun ◽  
Arkka Bhattacharyya ◽  
Yunshan Wang ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Large Area

Liquid Metal Printing for Manufacturing Large-Scale Flexible Electronic Circuits

2014 ◽  
Author(s):  
Yi Zheng ◽  
Zhi-Zhu He ◽  
Jun Yang ◽  
Jing Liu
Keyword(s):  
Liquid Metal ◽  
Large Scale ◽  
High Efficiency ◽  
Printed Electronics ◽  
Low Cost ◽  
Treatment Temperature ◽  
Consumer Electronics ◽  
Plastic Substrate ◽  
Electronic Circuits ◽  
Large Area

The advancement of printed electronics technology has significantly facilitated the development of electronic engineering. However, so far there still remain big barriers to impede the currently available printing technologies from being extensively used. Many of the difficulties came from the factors like: complicated ink-configurations, high post-treatment temperature, poor conductivity in room temperature and extremely high cost and time consuming fabrication process. From an alternative strategy, our recently invented desktop liquid metal printer offered a flexible way to better address the above deficiencies. Through modifying the system developed in the authors’ lab, here we demonstrated the feasibility of the method in quickly and reliably printing out various large area electronic circuits. Particularly, the liquid metal ink made of GaIn24.5 alloy, with a high electrical resistivity of 2.98×10−7 Ω·m, can be rapidly printed on polyvinyl chloride (PVC) substrate with maximum sizes spanning from centimeter size to meter large. Most important of all, all these manufactures were achieved at an extremely low cost level which clearly shows the ubiquitous value of the liquid metal printer. To evaluate the working performance of the present electronics fabrication method, the electrical resistance and wire width of the printed circuits were investigated under multiple overprinting cycles. For practical illustration purpose, LED lighting conductive patterns which can serve as a functional electronic decoration art were fabricated on the flexible plastic substrate. The present work sets up an example for directly making large-scale ending consumer electronics via a high-efficiency and low-cost way.

scholarly journals Photo-patternable, large-area solid-state liquid metal film coated via solution shearing for soft electronics

2021 ◽  
Author(s):  
Gun-Hee Lee ◽  
Hyeonji Kim ◽  
Juhyun Lee ◽  
Congqi Yang ◽  
Heemin Kang ◽  
...  
Keyword(s):  
Solid State ◽  
Liquid Metal ◽  
Manufacturing Strategy ◽  
Unique Combination ◽  
Large Area ◽  
Sensing Systems ◽  
Conducting Materials ◽  
Manufacturing Methods ◽  
Lift Off ◽  
Soft Electronics

Abstract Liquid metal (LM) is considered one of the most promising conducting materials for soft electronics due to its unique combination of metal-level high conductivity with exceptional deformability and stretchability. However, their practical applicability has thus far been limited due to the challenges of generating chemically and mechanically stable film over a large-area and the need for non-standard fabrication approaches. Here, we report materials and manufacturing methods that enable multiscale patterning (from microns to centimeters) and multilayer integration of ‘solid-state liquid metal (SSLM)’ with the conventional cleanroom process. In this work, solution shearing of a polyelectrolyte-attached LM particle ink is used to generate SSLM films. The stabilized LM particles were observed to form a close-packed thin-film without particle rupture when coated under evaporative regime. This is essential in enabling a subsequent photolithographic lift-off process at wafer-scale to produce high-resolution features (~ 10 µm) of varying thicknesses irrespective of the substrate. Demonstrations of wearable multilayer tactile sensing systems and stretchable skin-interfaced electronics validate the simplicity, versatility, and reliability of this manufacturing strategy, suggesting broad utility in the development of advanced soft electronics.

scholarly journals Room-temperature printing of 2D GaN semiconductor via liquid metal gallium surface confined nitridation reaction

2021 ◽  
Author(s):  
Jing Liu ◽  
Qian Li ◽  
Bang-Deng Du ◽  
Jian-Ye Gao ◽  
Bao-Yu Xing ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Field Effect ◽  
Room Temperature ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Wide Bandgap ◽  
Large Area ◽  
Ultraviolet Emission ◽  
Nitridation Reaction

Abstract Outstanding wide-bandgap semiconductor materials like gallium nitride (GaN) have been extensively utilized in power electronics, radiofrequency power amplifiers, and harsh environment adaptability. Due to its quantum confinement impact in enabling desired deep-ultraviolet emission, excitonic impact, and electronic transport features, two-dimensional (2D) GaN has been one of the most remarkable areas for the future growth of microelectronic devices. Here, for the first time, we report a large area, wide bandgap, and room-temperature 2D GaN synthesis and printing strategy via liquid metal gallium surface-confined nitridation reaction. The developed low-temperature synthesis and printing process is consistent with various electronic device manufacturing methods and thus opens a way for the cost-effective growth of the third-generation semiconductor. In particular, the fully printed field-effect transistors relying on the GaN show p-type switching with an on/off ratio greater than 105, maximum field-effect hole mobility of 53 cm2 V−1 s−1, and a small sub-threshold swing at room temperature. The current study establishes a room temperature way to produce the GaN, which can be further verified, generalized, and realized for various upcoming electronic and photoelectronic applications.

scholarly journals Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga 2 O 3 Films from Oxide Printing of Liquid Metal Gallium

2020 ◽  
Vol 217 (10) ◽  
pp. 1901007
Author(s):  
Jacqueline Cooke ◽  
Leila Ghadbeigi ◽  
Rujun Sun ◽  
Arkka Bhattacharyya ◽  
Yunshan Wang ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Synthesis And Characterization ◽  
Large Area

Convergent Beam Electron Diffraction

1978 ◽  
Vol 36 (3) ◽  
pp. 304-315
Author(s):  
G. Lehmpfuhl
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Crystal Surface ◽  
Diffraction Spot ◽  
Crystal Thickness ◽  
Large Area ◽  
Electron Microscopic ◽  
Additional Information ◽  
Microscopic Investigations

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

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