Electro-optic polymer devices for optical interconnects

Author(s):  
Richard S. Lytel ◽  
Edward S. Binkley ◽  
Dexter G. Girton ◽  
John T. Kenney ◽  
George F. Lipscomb ◽  
...  
1999 ◽  
Author(s):  
James P. Drummond ◽  
Stephen J. Clarson ◽  
John S. Zetts ◽  
Frank K. Hopkins ◽  
Stephen J. Caracci

1992 ◽  
Vol 264 ◽  
Author(s):  
Rick Lytel ◽  
Ferris Lipscomb ◽  
Tony Ticknor

AbstractElectro-optic (EO)polymers, processed into thin multilayer films, exhibit large nonresonant EO coefficients and low dielectric constants from DC to multi-GHz frequencies. Orientation of the constituent nonlinear optical chromophores, usually accomplished by electricfield poling, provides an EO coefficient suitable for modulation of light beams propagating in the plane of the polymer film. Thus, EO polymers are ideally suited for applications in integrated optics.The field EO polymer integrated optics has been developing rapidly during the past several years. Recent advances include the formulation of poled crosslinked epoxies and guest-host polyimides exhibiting thermal stability at temperatures significantly higher than those previously achieved with thermoplastic acrylate chemistry. These developments are an essential first step toward achieving practical materials exhibiting stability to manufacture, assembly, and end-use in modem electronic systems applications. This paper provides an introduction to EO polymer waveguide devices for applications to electronic packaging and interconnection.


1991 ◽  
Author(s):  
Richard S. Lytel ◽  
George F. Lipscomb ◽  
John T. Kenney ◽  
Anthony J. Ticknor

Author(s):  
Michal Lipson ◽  
Sasikanth Manipatruni ◽  
Kyle Preston ◽  
Carl Poitras

Photonics on a silicon chip could enable a platform for monolithic integration of optics and microelectronics for applications of optical interconnects in which high data streams are required in a small footprint. In this talk I will review the challenges and achievement in the field of silicon photonics. Using highly confined photonic structures one can enhance the electro-optical and non-linearities properties of Silicon and enable ultra-compact and low power photonic components with very low loss. We have recently demonstrated several active components including GHz electro-optic low power switches and modulators, all-optical amplifiers and wavelength converters on silicon.


1990 ◽  
Author(s):  
Richard S. Lytel ◽  
George F. Lipscomb ◽  
Edward S. Binkley ◽  
John T. Kenney ◽  
Anthony J. Ticknor

2013 ◽  
Author(s):  
Bruce Block ◽  
Shawna Liff ◽  
Mauro Kobrinsky ◽  
Miriam Reshotko ◽  
Ricky Tseng ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 99-104
Author(s):  
Brian S. Lee ◽  
Bumho Kim ◽  
Alexandre P. Freitas ◽  
Aseema Mohanty ◽  
Yibo Zhu ◽  
...  

AbstractHigh-performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative because graphene’s intrinsic carrier mobility increases at low temperature. Here, we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.


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