Optoelectronic devices with active region based on InGaAs/GaAs quantum well dots

2020 ◽  
Author(s):  
Mikhail Maximov ◽  
Nikita Gordeev ◽  
Yuriy Shernyakov ◽  
Alexey Payusov ◽  
Sergey Mintairov ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Optoelectronic Devices

Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters

2012 ◽  
Vol 111 (10) ◽  
pp. 103113 ◽  
Author(s):  
Mikhail V. Kisin ◽  
Chih-Li Chuang ◽  
Hussein S. El-Ghoroury
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Light Emitters ◽  
Non Equilibrium

Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Red Shift ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy

scholarly journals Stacked Dual-Band Quantum Well Infrared Photodetector Based on Double-Layer Gold Disk Enhanced Local Light Field

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2695
Author(s):  
Chang Liu ◽  
Xuan Zuo ◽  
Shaohui Xu ◽  
Lianwei Wang ◽  
Dayuan Xiong
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Double Layer ◽  
Enhancement Factor ◽  
Coupling Efficiency ◽  
Dual Band ◽  
Enhancement Effect ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector

We propose a stacked dual-band quantum well infrared photodetector (QWIP) integrated with a double-layer gold disk. Two 10-period quantum wells (QW) operating at different wavelengths are stacked together, and gold nano-disks are integrated on their respective surfaces. Numerical calculations by finite difference time domain (FDTD) showed that the best enhancement can be achieved at 13.2 and 11.0 µm. By integrating two metal disks, two plasmon microcavity structures can be formed with the substrate to excite localized surface plasmons (LSP) so that the vertically incident infrared light can be converted into electric field components perpendicular to the growth direction of the quantum well (EZ). The EZ electric field component can be enhanced up to 20 times compared to the incident light, and it is four times that of the traditional two-dimensional hole array (2DHA) grating. We calculated the enhancement factor and coupling efficiency of the device in the active region of the quantum well. The enhancement factor of the active region of the quantum well on the top layer remains above 25 at the wavelength of 13.2 μm, and the enhancement factor can reach a maximum of 45. Under this condition, the coupling efficiency of the device reaches 2800%. At the wavelength of 11.0 μm, the enhancement factor of the active region of the quantum well at the bottom is maintained above 6, and the maximum can reach about 16, and the coupling efficiency of the device reaches 800%. We also optimized the structural parameters and explored the influence of structural changes on the coupling efficiency. When the radius (r1, r2) of the two metal disks increases, the maximum coupling efficiency will be red-shifted as the wavelength increases. The double-layer gold disk structure we designed greatly enhances the infrared coupling of the two quantum well layers working at different wavelengths in the dual-band quantum well infrared photodetector. The structure we designed can be used in stacked dual-band quantum well infrared photodetectors, and the active regions of quantum wells working at two wavelengths can enhance the photoelectric coupling, and the enhancement effect is significant. Compared with the traditional optical coupling structure, the structure we proposed is simpler in process and has a more significant enhancement effect, which can meet the requirements of working in complex environments such as firefighting, night vision, and medical treatment.

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

BeCdSe/(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II-VI Lasers and Light-Emitting Diodes

2000 ◽  
Vol 180 (1) ◽  
pp. 275-280 ◽  
Author(s):  
S.V. Ivanov ◽  
A.A. Toropov ◽  
T.V. Shubina ◽  
S.V. Sorokin ◽  
O.V. Nekrutkina ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Light Emitting
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