Comparison of 850 nm VCSEL oxide aperture designs

2020 ◽  
Author(s):  
Niels Heermeier ◽  
Marcin Gebski ◽  
Nasibeh Haghighi ◽  
Philip Moser ◽  
Ping-Show Wong ◽  
...  
Keyword(s):  
Oxide Aperture

High-power operations of single-mode surface grating long oxide aperture VCSELs

2021 ◽  
Vol 119 (19) ◽  
pp. 191103
Author(s):  
Ahmed M. A. Hassan ◽  
Xiaodong Gu ◽  
Masanori Nakahama ◽  
Satoshi Shinada ◽  
Moustafa Ahmed ◽  
...  
Keyword(s):  
High Power ◽  
Single Mode ◽  
Surface Grating ◽  
Power Operations ◽  
Oxide Aperture

Effect of Oxide Aperture on Temperature Rise in High Power Vertical-Cavity Surface-Emitting Laser

2012 ◽  
Vol 39 (5) ◽  
pp. 0502005
Author(s):  
刘迪 Liu Di ◽  
宁永强 Ning Yongqiang ◽  
秦莉 Qin Li ◽  
张金龙 Zhang Jinlong ◽  
张星 Zhang Xing ◽  
...  
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Cavity Surface ◽  
Oxide Aperture ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

2020 ◽  
Vol 29 (2) ◽  
pp. 024201
Author(s):  
Wen-Yuan Liao ◽  
Jian Li ◽  
Chuan-Chuan Li ◽  
Xiao-Feng Guo ◽  
Wen-Tao Guo ◽  
...  
Keyword(s):  
Oxide Aperture ◽  
Output Characteristics

Structure-induced effects on the selective wet thermal oxidation of digital AlxGa1–xAs alloys

2008 ◽  
Vol 23 (11) ◽  
pp. 3006-3012 ◽  
Author(s):  
I. Suarez ◽  
M. Condé ◽  
L. Bouscayrol ◽  
C. Fontaine ◽  
G. Almuneau
Keyword(s):  
Reaction Rate ◽  
Cavity Surface ◽  
Arrhenius Law ◽  
Al Content ◽  
Oxidation Rates ◽  
Superlattice Structure ◽  
Oxide Aperture ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

A thorough study of the selective wet oxidation in digital AlxGa1–xAs alloys is presented. We report experimental results and physical interpretation on the oxidation kinetics within those ranges of the AlGaAs composition (x = 0.95 to 1) and layer thickness (20 to 50 nm) of interest for oxide-aperture vertical-cavity surface-emitting laser (VCSEL) application. We demonstrate the high controllability of the oxidation reaction between different Al compositions; made different thanks to the use of digital alloys. Unlike standard alloys, we measured an invariability of the oxidation rates in the studied thickness range (20–50 nm), implying a better control of the fabrication process. The dependence of the reaction rate with the temperature is expressed as an Arrhenius law. Two activation energies (1.2 and 0.55 eV) have been derived for composition ranges of x = 0.95–0.98 and x = 0.99–1, respectively, revealing that two different mechanisms are involved depending on the Al content and the superlattice structure of the digitally-grown AlGaAs.

Microstructure and Interfacial Properties of Laterally Oxidized AlxGa1-xAs

1996 ◽  
Vol 448 ◽  
Author(s):  
R.D. Twesten ◽  
D. M. Follstaedt ◽  
K. D. Choquette
Keyword(s):  
Cavity Surface ◽  
Gamma Phase ◽  
Stress Concentrations ◽  
Al Content ◽  
Oxide Aperture ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
High Al Content ◽  
Vertical Cavity

AbstractThe oxidation of high Al content AlxGa1-xAs has received much attention due to its use in oxide-aperture, vertical-cavity surface emitting lasers (VCSELs) and for passivating AlAs against environmental degradation. We have recently identified the spinel, gamma phase of Al2O3 in layers laterally oxidized in steam at 450°C for =0.98 & 0.92 and have seen evidence for an amorphous precursor to the gamma phase. At the interface with the unoxidized AlxGa1-xAs , an ~17nm amorphous phase remains which could account for the excellent electrical properties of oxide-confined VCSELs and help reduce stress concentrations at the oxide terminus.

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