Influence of Oxide Aperture on the Properties of 1.3¿m InAs-GaAs Quantum-Dot VCSELs

2008 ◽  
Author(s):  
D. W. Xu ◽  
S. F. Yoon ◽  
C. Z. Tong ◽  
W. J. Fan
Keyword(s):  
Quantum Dot ◽  
Oxide Aperture ◽  
Gaas Quantum Dot

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

2009 ◽  
Vol 17 (3) ◽  
Author(s):  
Ł. Piskorski ◽  
M. Wasiak ◽  
R. Sarzała ◽  
W. Nakwaski
Keyword(s):  
Quantum Dot ◽  
Continuous Wave ◽  
Optical Cavity ◽  
Optical Gain ◽  
Active Regions ◽  
Cavity Surface ◽  
Free Carrier Absorption ◽  
Oxide Aperture ◽  
Vertical Cavity Surface ◽  
Gaas Quantum Dot

AbstractRoom-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP01 mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.

Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling

2021 ◽  
Vol 124 ◽  
pp. 105614
Author(s):  
S. Tilouche ◽  
A. Sayari ◽  
M. Omri ◽  
S. Souilem ◽  
L. Sfaxi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Theoretical Study ◽  
Quantum Dot Molecules ◽  
Gaas Quantum Dot

Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

2008 ◽  
Vol 20 (18) ◽  
pp. 1575-1577
Author(s):  
Shu-Ting Chou ◽  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Single Period ◽  
Quantum Dot Infrared Photodetectors ◽  
Gaas Quantum Dot

scholarly journals Demonstration of a GaSb/GaAs Quantum Dot Intermediate Band Solar Cell Operating at Maximum Power Point

2020 ◽  
Vol 125 (24) ◽  
Author(s):  
I. Ramiro ◽  
J. Villa ◽  
J. Hwang ◽  
A. J. Martin ◽  
J. Millunchick ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Maximum Power ◽  
Maximum Power Point ◽  
Intermediate Band ◽  
Intermediate Band Solar Cell ◽  
Gaas Quantum Dot ◽  
Power Point
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