GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors

1996 ◽  
Author(s):  
Henry X. Yuan ◽  
A. G. Unil Perera ◽  
M. H. Francombe ◽  
Sisira K. Gamage ◽  
Hui C. Liu ◽  
...  
1997 ◽  
Vol 38 (3) ◽  
pp. 133-138 ◽  
Author(s):  
W.Z. Shen ◽  
A.G.U. Perera ◽  
S.K. Gamage ◽  
H.X. Yuan ◽  
H.C. Liu ◽  
...  

2000 ◽  
Vol 74 (1-3) ◽  
pp. 56-60 ◽  
Author(s):  
A.G.U Perera ◽  
W.Z Shen ◽  
H.C Liu ◽  
M Buchanan ◽  
W.J Schaff

2002 ◽  
Vol 12 (03) ◽  
pp. 821-872
Author(s):  
A. G. U. PERERA ◽  
S. G. MATSIK

FIR photon detector development starting from the extrinsic detectors for LWIR to FIR wavelengths are presented. Several other types of IR detectors, including the cut-off wavelength extension into the FIR range for quantum well infrared photodetectors (QWIPs), are summarized. Efforts in developing p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors and the most reason developments on GaAs/AlGaAs Heterojunction interfacial workfunction internal photoemission (HEIWIP) far-infrared detectors are presented.


1998 ◽  
Author(s):  
A. G. Unil Perera ◽  
W. Z. Shen ◽  
Hui C. Liu ◽  
Margaret Buchanan ◽  
Michael A. Tanner ◽  
...  

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