Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation)

2020 ◽  
Author(s):  
Justin Goodrich ◽  
Hanlin Fu ◽  
Damir Borovac ◽  
Nelson Tansu
Keyword(s):  
Lattice Matched

MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs

1997 ◽  
Vol 175-176 ◽  
pp. 844-848 ◽  
Author(s):  
Makoto Kudo ◽  
Tomoyoshi Mishima
Keyword(s):  
Mbe Growth ◽  
Si Doped ◽  
Lattice Matched

Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy

2021 ◽  
Vol 726 ◽  
pp. 138646
Author(s):  
Takahiro Tsukamoto ◽  
Nobumitsu Hirose ◽  
Akifumi Kasamatsu ◽  
Toshiaki Matsui ◽  
Yoshiyuki Suda
Keyword(s):  
Raman Spectroscopy ◽  
Lattice Matched

scholarly journals Single-crystalline epitaxial TiO film: A metal and superconductor, similar to Ti metal

2021 ◽  
Vol 7 (2) ◽  
pp. eabd4248
Author(s):  
Fengmiao Li ◽  
Yuting Zou ◽  
Myung-Geun Han ◽  
Kateryna Foyevtsova ◽  
Hyungki Shin ◽  
...  
Keyword(s):  
Transition Metal ◽  
Density Functional ◽  
Tight Binding ◽  
Crystal Form ◽  
Titanium Monoxide ◽  
Binding Model ◽  
Functional Theory ◽  
Single Crystalline ◽  
First Time ◽  
Lattice Matched

Titanium monoxide (TiO), an important member of the rock salt 3d transition-metal monoxides, has not been studied in the stoichiometric single-crystal form. It has been challenging to prepare stoichiometric TiO due to the highly reactive Ti2+. We adapt a closely lattice-matched MgO(001) substrate and report the successful growth of single-crystalline TiO(001) film using molecular beam epitaxy. This enables a first-time study of stoichiometric TiO thin films, showing that TiO is metal but in proximity to Mott insulating state. We observe a transition to the superconducting phase below 0.5 K close to that of Ti metal. Density functional theory (DFT) and a DFT-based tight-binding model demonstrate the extreme importance of direct Ti–Ti bonding in TiO, suggesting that similar superconductivity exists in TiO and Ti metal. Our work introduces the new concept that TiO behaves more similar to its metal counterpart, distinguishing it from other 3d transition-metal monoxides.

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

2017 ◽  
Vol 10 (7) ◽  
pp. 075504 ◽  
Author(s):  
Keisuke Yamane ◽  
Masaya Goto ◽  
Kenjiro Takahashi ◽  
Kento Sato ◽  
Hiroto Sekiguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Substrate ◽  
Tandem Solar Cells ◽  
Lattice Matched

Structural and magnetic properties of NiFe2O4 thin films grown on isostructural lattice-matched substrates

2021 ◽  
Vol 118 (15) ◽  
pp. 152402
Author(s):  
Sudhir Regmi ◽  
Zhong Li ◽  
Abhishek Srivastava ◽  
Rabin Mahat ◽  
Shambhu KC ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Structural And Magnetic Properties ◽  
Lattice Matched

Role of the Electrode Morphology, Thickness and Orientation in the Ferroelectric Performance of Epitaxial Pb(Zr,Ti)O3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Cesar Guerrero ◽  
Florencio Sánchez ◽  
José Roldán ◽  
Frank Güell ◽  
María V. García-Cuenca
Keyword(s):  
Electrode Materials ◽  
Stabilized Zirconia ◽  
Large Thickness ◽  
Low Dielectric ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Ferroelectric Layer ◽  
Ferroelectric Capacitors ◽  
Lattice Matched

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

scholarly journals Effect of strain-induced anisotropy on magnetization dynamics in Y3Fe5O12 films recrystallized on a lattice-mismatched substrate

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Adam Krysztofik ◽  
Sevgi Özoğlu ◽  
Robert D. McMichael ◽  
Emerson Coy
Keyword(s):  
Dispersion Model ◽  
Perpendicular Magnetic Anisotropy ◽  
Negative Slope ◽  
Recrystallization Process ◽  
Induced Anisotropy ◽  
Magnetization Dynamics ◽  
Unexpected Formation ◽  
Lattice Matched ◽  
Ferromagnetic Resonance Linewidth ◽  
Lattice Mismatched Substrate

AbstractWe report on the correlation of structural and magnetic properties of Y3Fe5O12 (YIG) films deposited on Y3Al5O12 substrates using pulsed laser deposition. The recrystallization process leads to an unexpected formation of interfacial tensile strain and consequently strain-induced anisotropy contributing to the perpendicular magnetic anisotropy. The ferromagnetic resonance linewidth of YIG is significantly increased in comparison to a film on a lattice-matched Gd3Ga5O12 substrate. Notably, the linewidth dependency on frequency has a negative slope. The linewidth behavior is explained with the proposed anisotropy dispersion model.

Van der Waals Epitaxy of GaSe on GaAs(111)

1994 ◽  
Vol 340 ◽  
Author(s):  
L. E. Rumaner ◽  
F.S. Ohuchi
Keyword(s):  
Lattice Mismatch ◽  
Van Der Waals ◽  
Three Dimensional ◽  
Structured Materials ◽  
Lattice Matching ◽  
Molecular Beam Deposition ◽  
Crystal Films ◽  
Low Dimensional ◽  
Matching Constraints ◽  
Lattice Matched

ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.

scholarly journals Impact Ionization Coefficients in (AlₓGa₁₋ₓ)0.52In0.48P and AlₓGa₁₋ₓAs Lattice-Matched to GaAs

2021 ◽  
pp. 1-6
Author(s):  
Harry I. J. Lewis ◽  
Liang Qiao ◽  
Jeng Shiuh Cheong ◽  
Aina N. A. P. Baharuddin ◽  
Andrey B. Krysa ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients ◽  
Lattice Matched
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