GaAs nano-ridge lasers on silicon (Conference Presentation)

2020 ◽  
Author(s):  
Dries Van Thourhout ◽  
Yuting Shi ◽  
Marina Baryshnikova ◽  
Yannick De Koninck ◽  
Marianna Pantouvaki ◽  
...  
Keyword(s):  
Ridge Lasers

AlGaAs/GaAs‐based triangular‐shaped ring ridge lasers

1992 ◽  
Vol 60 (14) ◽  
pp. 1658-1660 ◽  
Author(s):  
A. Behfar‐Rad ◽  
J. M. Ballantyne ◽  
S. S. Wong
Keyword(s):  
Ridge Lasers

Impurity Free Vacancy Disordering Using Phosphorus Doped SiO2 and Pure SiO2 Caps

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Cusumano ◽  
A. Saher Helmy ◽  
B. S. Ooi ◽  
R. M. De La Rue ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonance Method ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Extended Cavity ◽  
Low Threshold ◽  
Ridge Lasers ◽  
Phosphorus Doped ◽  
Pure Sio2

ABSTRACTA spatially selective quantum well intermixing process, using phosphorus-doped silica (SiO2:P) containing 5 wt% P to inhibit intermixing and pure SiO2 to enhance intermixing, is presented. The SiO2:P cap has been found to suppress bandgap shifts in both p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures, with bandgap shift differences as large as 100 meV observed from samples capped with SiO2 and with SiO2:P after rapid thermal processing at temperatures as high as 950 °C for 60 s. Extended cavity ridge lasers exhibited low threshold currents with TE losses of 3.2 cm−1 measured in the passive waveguide sections at the lasing wavelength using the Fabry-Perot resonance method. This value is among the lowest reported so far using an impurity-free disordering technique.

IVB-4 1.55µm single-longitudinal-mode multisection ridge lasers

1983 ◽  
Vol 30 (11) ◽  
pp. 1593-1594
Author(s):  
J.E. Bowers ◽  
L.A. Coldren ◽  
B.R. Hemenway ◽  
B.I. Miller
Keyword(s):  
Longitudinal Mode ◽  
Single Longitudinal Mode ◽  
Ridge Lasers

Highly reliable 980-nm strained InGaAs/AlGaAs high-power buried ridge lasers.

1994 ◽  
Author(s):  
Shin Ishikawa ◽  
Kazno Fukagai ◽  
Hiroaki Chida ◽  
Takashi Miyazaki
Keyword(s):  
High Power ◽  
Ridge Lasers

scholarly journals Waveguide and Γ-factor optimization for low-divergence ridge lasers

2018 ◽  
Vol 1038 ◽  
pp. 012074
Author(s):  
I K Boikov ◽  
A V Savelyev ◽  
A E Zhukov
Keyword(s):  
Ridge Lasers

scholarly journals Ultra-low threshold lasing through phase front engineering via a metallic circular aperture

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhixin Wang ◽  
Filippos Kapsalidis ◽  
Ruijun Wang ◽  
Mattias Beck ◽  
Jérôme Faist
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Threshold Power ◽  
Circular Aperture ◽  
Phase Front ◽  
Reflective Coating ◽  
Low Threshold ◽  
Ridge Lasers ◽  
Reflective Coatings ◽  
Electrical Consumption

AbstractSemiconductor lasers with extremely low threshold power require a combination of small volume active region with high-quality-factor cavities. For ridge lasers with highly reflective coatings, an ultra-low threshold demands significantly suppressing the diffraction loss at the facets of the laser. Here, we demonstrate that introducing a subwavelength aperture in the metallic highly reflective coating of a laser can correct the phase front, thereby counter-intuitively enhancing both its modal reflectivity and transmissivity at the same time. Theoretical and experimental results manifest a decreasing in the mirror loss by over 40% and an increasing in the transmissivity by 104. Implementing this method on a small-cavity quantum cascade laser, room-temperature continuous-wave lasing operation at 4.5 μm wavelength with an electrical consumption power of only 143 mW is achieved. Our work suggests possibilities for future portable applications and can be implemented in a broad range of optoelectronic systems.

scholarly journals InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration

2020 ◽  
Vol 28 (18) ◽  
pp. 26555 ◽  
Author(s):  
Wen-Qi Wei ◽  
Qi Feng ◽  
Jing-Jing Guo ◽  
Ming-Chen Guo ◽  
Jian-Huan Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Photonic Integration ◽  
Silicon Photonic ◽  
Narrow Ridge ◽  
Gaas Quantum Dot ◽  
Ridge Lasers ◽  
Soi Substrates

900-mW high brightness buried ridge lasers by selective area epitaxy

2002 ◽  
Vol 14 (4) ◽  
pp. 441-443 ◽  
Author(s):  
R.B. Swint ◽  
A.E. Huber ◽  
T.S. Yeoh ◽  
C.Y. Woo ◽  
J.J. Coleman ◽  
...  
Keyword(s):  
Selective Area Epitaxy ◽  
High Brightness ◽  
Selective Area ◽  
Ridge Lasers
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