900-mW high brightness buried ridge lasers by selective area epitaxy

2002 ◽  
Vol 14 (4) ◽  
pp. 441-443 ◽  
Author(s):  
R.B. Swint ◽  
A.E. Huber ◽  
T.S. Yeoh ◽  
C.Y. Woo ◽  
J.J. Coleman ◽  
...  
Keyword(s):  
Selective Area Epitaxy ◽  
High Brightness ◽  
Selective Area ◽  
Ridge Lasers

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

Monolithic integration of InGaAsp/Inp lasers and heterostructure bipolar transistors by selective area epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 645 ◽  
Author(s):  
X. An ◽  
H. Temkin ◽  
A. Feygenson ◽  
R.A. Hamm ◽  
M.A. Cotta ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Selective Area Epitaxy ◽  
Selective Area

Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission

2009 ◽  
Vol 1202 ◽  
Author(s):  
Wen Feng ◽  
Vladimir Kuryatkov ◽  
Dana Rosenbladt ◽  
Nenad Stojanovic ◽  
Mahesh Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Single Type ◽  
Selective Area Epitaxy ◽  
Polar Crystal ◽  
Selective Area ◽  
Narrow Ridge ◽  
Intensity Images ◽  
Two Peaks ◽  
Surface Morphologies

AbstractWe report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) AlN/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the <11-20> direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.

Laser selective area epitaxy of GaAs metal‐semiconductor‐field‐effect transistor

1991 ◽  
Vol 58 (15) ◽  
pp. 1659-1661 ◽  
Author(s):  
H. Liu ◽  
J. C. Roberts ◽  
J. Ramdani ◽  
S. M. Bedair
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Effect Transistor

GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
S. H. PARK ◽  
S.-L. FU ◽  
P. K. L. YU ◽  
P. M. ASBECK
Keyword(s):  
Light Field ◽  
Defect Density ◽  
Forward Bias ◽  
Dark Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Selective Area Epitaxy ◽  
Metal Base ◽  
Selective Area

AbstractA study of selective area epitaxy (SAE) of GalnP lattice matched to GaAs is presented. The selectively regrown GaInP is used as the emitter of a novel heterojunction bipolar transistor (HBT) device structure. Successful SAE of GalnP on both dark field (mostly covered) and light field (mostly open) SiO2 masks is compared. To characterize the critical regrown heterojunction, diodes and HBTs were fabricated and measured. It is found that a pre-growth pause of either TEGa or PH3 results in forward bias characteristics with low leakage and an ideality factor of ~1.25, indicating low interfacial defect density. Non-self aligned regrown emitter HBTs grown with a dark field mask scheme have been fabricated. Devices with an emitter area of 3x12 μm exhibit small signal current gain up to 80 with an fT and fMAX of 22 GHz and 18 GHz, respectively. To further improve the performance of these devices, a structure with a self-aligned refractory metal base contact and light field regrowth is proposed.

High Quality GaAs on Si by Selective Area Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
M. Lingunis ◽  
...  
Keyword(s):  
Atomic Layer ◽  
High Quality ◽  
Selective Area Epitaxy ◽  
Defect Reduction ◽  
Gaas On Si ◽  
Reduction Techniques ◽  
Selective Area ◽  
Gaas Films ◽  
Oxide Removal ◽  
Si Films

ABSTRACTSelective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si wafers. SE was found to eliminate wafer warpage, reduce film cracking and reduce the tensile stresses for islands less than 200 µm/side. Complete stress relief has been achieved in 10 µm/side islands after oxide removal. Defect reduction techniques have been employed resulting in two orders of magnitude reduction in the dislocation density and excellent surface morphologies. This paper addresses the potential of SE, by the above techniques in improving the quality of the GaAs on Si films.

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