Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)

2020 ◽  
Author(s):  
Matthew P. Halsall ◽  
Iain Crowe ◽  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Colin J. Humphreys
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Quantum Efficiency

scholarly journals Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

2004 ◽  
Vol 85 (21) ◽  
pp. 4905-4907 ◽  
Author(s):  
Patrick A. Grandt ◽  
Aureus E. Griffith ◽  
M. O. Manasreh ◽  
D. J. Friedman ◽  
S. Doğan ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Carrier Concentration ◽  
Single Quantum

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

2005 ◽  
Vol 98 (5) ◽  
pp. 053509 ◽  
Author(s):  
C. E. Martinez ◽  
N. M. Stanton ◽  
A. J. Kent ◽  
D. M. Graham ◽  
P. Dawson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

Thermal lens determination of fluorescence quantum efficiency of3F4level of Tm3+ions in solids

2005 ◽  
Vol 125 ◽  
pp. 193-196 ◽  
Author(s):  
S. L. Oliveira ◽  
S. M. Lima ◽  
T. Catunda ◽  
H. Vargas ◽  
L. A.O. Nunes ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Lens

Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

1994 ◽  
Vol 37 (4-6) ◽  
pp. 665-667 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
F. Kobbi ◽  
M. Kamal-Saadi ◽  
D. Dur ◽  
C. Skierbiszewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Basic Parameters

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of unscreened exciton states in polar ZnO/(Mg,Zn)O quantum wells with strong quantum-confined Stark effect

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Marko Stölzel ◽  
Alexander Müller ◽  
Gabriele Benndorf ◽  
Matthias Brandt ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells

1986 ◽  
Vol 49 (9) ◽  
pp. 519-521 ◽  
Author(s):  
T. E. Schlesinger ◽  
T. Kuech
Keyword(s):  
Quantum Wells
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