Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

2005 ◽  
Vol 98 (5) ◽  
pp. 053509 ◽  
Author(s):  
C. E. Martinez ◽  
N. M. Stanton ◽  
A. J. Kent ◽  
D. M. Graham ◽  
P. Dawson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

scholarly journals Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Kazimieras Nomeika ◽  
Mantas Dmukauskas ◽  
Ramūnas Aleksiejūnas ◽  
Patrik Ščajev ◽  
Saulius Miasojedovas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Recombination Coefficient ◽  
Time Resolved ◽  
Mocvd Growth ◽  
Lower Strain ◽  
Type Contact ◽  
Ingan Quantum Wells

Enhancement of internal quantum efficiency (IQE) in InGaN quantum wells by insertion of a superlattice interlayer and applying the pulsed growth regime is investigated by a set of time-resolved optical techniques. A threefold IQE increase was achieved in the structure with the superlattice. It was ascribed to the net effect of decreased internal electrical field due to lower strain and altered carrier localization conditions. Pulsed MOCVD growth also resulted in twice higher IQE, presumably due to better control of defects in the structure. An LED (light emitting diode) structure with a top p-type contact GaN layer was manufactured by using both growth techniques with the peak IQE equal to that in the underlying quantum well structure. The linear recombination coefficient was found to gradually increase with excitation due to carrier delocalization, and the latter dependence was successfully used to fit the IQE droop.

Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

2014 ◽  
Vol 57 (4) ◽  
pp. 533-535 ◽  
Author(s):  
I. S. Romanov ◽  
I. A. Prudaev ◽  
А. А. Marmalyuk ◽  
V. A. Kureshov ◽  
D. R. Sabitov ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

scholarly journals Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

2011 ◽  
Vol 19 (S4) ◽  
pp. A991 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Jing Zhang ◽  
Jonathan D. Poplawsky ◽  
Volkmar Dierolf ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting
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