scholarly journals Directed self-assembly of InAs quantum dots using in situ interference lithography

2020 ◽  
Author(s):  
Yunran Wang ◽  
Mark Hopkinson ◽  
Im Sik Han ◽  
Saraswati Behera ◽  
Chaoyuan Jin
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Interference Lithography ◽  
Inas Quantum Dots

Dynamics of InAs Quantum Dots Formation on AlAs and GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
M. Yakimov ◽  
V. Tokranov ◽  
S. Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Single Layer ◽  
High Energy ◽  
Ex Situ ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Kinetics Of

AbstractWe have studied the formation of InAs quantum dots (QDs) grown by molecular beam epitaxy on top of GaAs and 2 ML-thick AlAs layers in the temperature range from 350 to 500°C. In-situ reflection high energy electron diffraction (RHEED) patterns were recorded in real time during the growth and analyzed to characterize the 2D-to-3D transition on the surface, including QD formation, and ripening process. The kinetics of QD formation was studied using the InAs growth rates ranging from 0.01 to 1 ML/s and different ratios of As2/In fluxes. RHEED patterns and ex-situ atomic force microscopy images were analyzed to reveal the development of sizes and shapes of the single-layer and stacked QD ensembles. The critical InAs coverage for QD formation was shown to be consistently higher for dots grown on the AlAs overlayer than for those grown on GaAs surface. Self-assembly of multilayer QD stacks revealed the reduction of the critical thickness for dots formed in the upper layers.

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

2008 ◽  
Vol 93 (10) ◽  
pp. 101908 ◽  
Author(s):  
P. Atkinson ◽  
S. Kiravittaya ◽  
M. Benyoucef ◽  
A. Rastelli ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Controlled Growth ◽  
Patterned Substrates ◽  
Inas Quantum Dots

Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes

2002 ◽  
Vol 749 ◽  
Author(s):  
Michael Yakimov ◽  
Vadim Tokranov ◽  
Alex Katnelson ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Direct Evidence ◽  
Matrix Material ◽  
Single Layer ◽  
High Energy ◽  
Inas Quantum Dots ◽  
Auger Signal ◽  
The Matrix ◽  
Growth Evolution

ABSTRACTWe have studied the first phases of post-growth evolution of InAs quantum dots (QDs) using in-situ Auger electron spectroscopy in conjunction with Reflection High Energy Electron Diffraction (RHEED). Direct evidence for InAs intermixing with about 6ML (monolayers) of the matrix material is found from Auger signal behavior during MBE overgrowth of InAs nanostructures. Re-establishment of 2D growth mode by overgrowth with GaAs or AlAs was monitored in single-layer and multi-layer QD structures using RHEED. Decay process of InAs QDs on the surface is found to have activation energy of about 1.1 eV that corresponds to In intermixing with the matrix rather than evaporation from the surface.

GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots

2020 ◽  
Vol 124 ◽  
pp. 114217 ◽  
Author(s):  
C.A. Mercado-Ornelas ◽  
I.E. Cortes-Mestizo ◽  
E. Eugenio-López ◽  
L.I. Espinosa-Vega ◽  
D. García-Compean ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Strain Effects ◽  
Inas Quantum Dots

scholarly journals In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

2007 ◽  
Vol 78 (7) ◽  
pp. 073908 ◽  
Author(s):  
Shunsuke Ohkouchi ◽  
Yusui Nakamura ◽  
Naoki Ikeda ◽  
Yoshimasa Sugimoto ◽  
Kiyoshi Asakawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Inas Quantum Dots ◽  
Molecular Beam Epitaxy System

Extremely low density InAs quantum dots realized in situ on (100) GaAs

2004 ◽  
Vol 15 (12) ◽  
pp. 1763-1766 ◽  
Author(s):  
Jie Sun ◽  
Peng Jin ◽  
Zhan-Guo Wang
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Inas Quantum Dots
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