Charge trapping and degradation of Ga2O3 isolation structures for power electronics

Author(s):  
Carlo De Santi ◽  
Arianna Nardo ◽  
Man Hoi Wong ◽  
Ken Goto ◽  
Akito Kuramata ◽  
...  
1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


Author(s):  
Michael A. Henry ◽  
John F. Maddox ◽  
Sushil Bhavnani ◽  
Roy W. Knight ◽  
James Pool

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