A Monte Carlo solution to hole transport processes in avalanche selenium semiconductors

2020 ◽  
Author(s):  
Atreyo Mukherjee ◽  
Richard Akis ◽  
Dragica Vasileska ◽  
Amirhossein H. Goldan
Keyword(s):  
Monte Carlo ◽  
Hole Transport ◽  
Transport Processes

scholarly journals Monte Carlo Solution of High Electric Field Hole Transport Processes in Avalanche Amorphous Selenium

ACS Omega ◽  
2021 ◽  
Vol 6 (7) ◽  
pp. 4574-4581
Author(s):  
Atreyo Mukherjee ◽  
Dragica Vasileska ◽  
John Akis ◽  
Amir H. Goldan
Keyword(s):  
Monte Carlo ◽  
Electric Field ◽  
Hole Transport ◽  
Transport Processes ◽  
High Electric Field ◽  
Amorphous Selenium

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

2015 ◽  
Vol 25 (43) ◽  
pp. 6802-6813 ◽  
Author(s):  
Pichaya Pattanasattayavong ◽  
Alexander D. Mottram ◽  
Feng Yan ◽  
Thomas D. Anthopoulos
Keyword(s):  
Wide Bandgap ◽  
Hole Transport ◽  
Transport Processes ◽  
Solution Processed ◽  
Wide Bandgap Semiconductor

Monte Carlo study of hole transport in silicon

1993 ◽  
Vol 74 (5) ◽  
pp. 3219-3223 ◽  
Author(s):  
Jim Dewey ◽  
M. A. Osman
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport

scholarly journals Monte Carlo simulations of hole transport in 4H-SiC using DOS calculations

2020 ◽  
Vol 1534 ◽  
pp. 012006
Author(s):  
Andrii Kovalchuk ◽  
Janusz Wozny ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Lukasz Ruta ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Hole Transport

scholarly journals High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
F. M. Bufler ◽  
P. Graf ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Hole Transport ◽  
Band Model ◽  
Strained Si ◽  
Saturation Velocity ◽  
Full Band ◽  
Structure Description ◽  
Strained Sige

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

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