Dynamic holography method for the diagnostics of nanosuspensions

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Artyom V. Mjagotin ◽  
Galina D. Ivanova ◽  
Svetlana I. Kirjushina ◽  
Valerii I. Ivanov
Keyword(s):  
2005 ◽  
Vol 81 (4) ◽  
pp. 920 ◽  
Author(s):  
Elena Korchemskaya ◽  
Nikolai Burykin ◽  
Angel de Lera ◽  
Rosana Alvarez ◽  
Sergey Pirutin ◽  
...  

1999 ◽  
Vol 69 (2) ◽  
pp. 155-157 ◽  
Author(s):  
N. Huot ◽  
J.M. Jonathan ◽  
G. Pauliat ◽  
P. Georges ◽  
A. Brun ◽  
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2001 ◽  
Author(s):  
Vance A. Deason ◽  
Kenneth L. Telschow ◽  
Scott M. Watson

1996 ◽  
Vol 129 (5-6) ◽  
pp. 405-413 ◽  
Author(s):  
M.P. Bogdanov ◽  
S.A. Dimakov ◽  
A.V. Gorlanov ◽  
D.A. Goryachkin ◽  
A.M. Grigor'ev ◽  
...  

2007 ◽  
Vol 104 (5) ◽  
pp. 696-703 ◽  
Author(s):  
V. M. Petrov ◽  
M. P. Petrov ◽  
V. V. Bryksin ◽  
J. Petter ◽  
T. Tschudi

1998 ◽  
Author(s):  
Andrey G. Iljin ◽  
Gertruda V. Klimusheva ◽  
L. P. Yatsenko ◽  
T. A. Mirnaya ◽  
A. P. Polishchuk ◽  
...  

Author(s):  
Mikhail P. Petrov ◽  
Sergei I. Stepanov ◽  
Anatoly V. Khomenko
Keyword(s):  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Mantao Huang ◽  
Aik Jun Tan ◽  
Felix Büttner ◽  
Hailong Liu ◽  
Qifeng Ruan ◽  
...  

Abstract Devices with locally-addressable and dynamically tunable optical properties underpin emerging technologies such as high-resolution reflective displays and dynamic holography. The optical properties of metals such as Y and Mg can be reversibly switched by hydrogen loading, and hydrogen-switched mirrors and plasmonic devices have been realized, but challenges remain to achieve electrical, localized and reversible control. Here we report a nanoscale solid-state proton switch that allows for electrical control of optical properties through electrochemical hydrogen gating. We demonstrate the generality and versatility of this approach by realizing tunability of a range of device characteristics including transmittance, interference color, and plasmonic resonance. We further discover and exploit a giant modulation of the effective refractive index of the gate dielectric. The simple gate structure permits device thickness down to ~20 nanometers, which can enable device scaling into the deep subwavelength regime, and has potential applications in addressable plasmonic devices and reconfigurable metamaterials.


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