Selective image extraction by synthesis of the coherence function using two-dimensional optical lock-in amplifier with microchannel spatial light modulator

Author(s):  
Zuyuan He ◽  
Toru Okugawa ◽  
Naohisa Mukohzaka ◽  
Kazuo Hotate
1994 ◽  
Vol 1 (2) ◽  
pp. 237-240 ◽  
Author(s):  
Yukihisa Osugi ◽  
Youichi Btou ◽  
Takumi Minemoto

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Haibin Sun ◽  
Tingting Liu

The fringe projection technique has been widely used in optical measurements. In this paper, we demonstrate a scheme to measure the 3D displacement of a deformed sample using Talbot fringe projection. In this process, we designed a two-dimensional square Talbot hologram. In this approach, we used the basic principle of triangulation, and a computer-controlled liquid crystal spatial light modulator (LC-SLM) was placed in the optical path. The Talbot array hologram was displayed on the LC-SLM screen and projected onto the surface of a sample. Two patterns were recorded: one before and one after deformation. We simultaneously acquired the in-plane and out-of-plane displacements using the digital image correlation (DIC) method. This scheme is simple and easily implemented. Theoretical and experimental results are presented.


2002 ◽  
Vol 738 ◽  
Author(s):  
R.P. Raffaelle ◽  
T. Gennett ◽  
J. E. Lau ◽  
P. Jenkins ◽  
S.L. Castro ◽  
...  

ABSTRACTThe ability to determine the in-situ optoelectronic behavior of semiconductor materials has become especially important as the size of device architectures is reduced and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy or STORM has the ability to interrogate the optical bandgap as a function of position within a semiconductor microstructure. This technique uses a tunable solid-state Ti sapphire laser whose output is “chopped” using a spatial light modulator and is coupled by a fiber optic to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor phase epitaxy (OMVPE) at the NASA Glenn Research Center. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy, photoluminescence, and with the theoretical values that were based on x-ray diffraction results.


1993 ◽  
Vol 18 (1) ◽  
pp. 63 ◽  
Author(s):  
T.-C. Poon ◽  
M. H. Wu ◽  
K. Shinoda ◽  
Y. Suzuki ◽  
B. W. Schilling

2020 ◽  
Vol 3 (6) ◽  
pp. 5463-5472
Author(s):  
Jenny Enevold ◽  
Tobias Dahlberg ◽  
Tim Stangner ◽  
Shi Tang ◽  
E. Mattias Lindh ◽  
...  

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