Electrical spin Hall measurement with H-shaped structure of a single metal (Conference Presentation)

2019 ◽  
Author(s):  
Dazhi Hou
Keyword(s):  
Hall Measurement ◽  
Electrical Spin

Robust electrical spin injection into a semiconductor heterostructure

2000 ◽  
Vol 62 (12) ◽  
pp. 8180-8183 ◽  
Author(s):  
B. T. Jonker ◽  
Y. D. Park ◽  
B. R. Bennett ◽  
H. D. Cheong ◽  
G. Kioseoglou ◽  
...  
Keyword(s):  
Spin Injection ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

2002 ◽  
Vol 81 (2) ◽  
pp. 265-267 ◽  
Author(s):  
V. F. Motsnyi ◽  
J. De Boeck ◽  
J. Das ◽  
W. Van Roy ◽  
G. Borghs ◽  
...  
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Semiconductor Heterostructure ◽  
Electrical Spin

scholarly journals Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

2002 ◽  
Vol 80 (7) ◽  
pp. 1240-1242 ◽  
Author(s):  
A. T. Hanbicki ◽  
B. T. Jonker ◽  
G. Itskos ◽  
G. Kioseoglou ◽  
A. Petrou
Keyword(s):  
Spin Injection ◽  
Tunnel Barrier ◽  
Magnetic Metal ◽  
Electrical Spin

Deep Level Centers in Carbon-Doped High Resistivity GaN

2014 ◽  
Vol 997 ◽  
pp. 492-495
Author(s):  
Huan Cui ◽  
Li Wu Lu ◽  
Ling Sang ◽  
Bai He Chen ◽  
Zhi Wei He ◽  
...  
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Hall Measurement ◽  
High Resistivity ◽  
Organic Chemical ◽  
Carbon Doped ◽  
Metal Organic ◽  
High Level ◽  
Organic Chemical Vapor Deposition

The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to VN, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to VGa, 0.59eV related to CGaor NGa, 0.91 and 0.97eV related to interstitial N1.

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

scholarly journals Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

2011 ◽  
Vol 84 (16) ◽  
Author(s):  
Kun-Rok Jeon ◽  
Byoung-Chul Min ◽  
Young-Hun Jo ◽  
Hun-Sung Lee ◽  
Il-Jae Shin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Electrical Spin
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