Mitigation of line edge roughness and line width roughness in block copolymer directed self-assembly through polymer composition molecular weight manipulation

2019 ◽  
Author(s):  
Jakin B. Delony ◽  
Peter J. Ludovice ◽  
Clifford L. Henderson
Keyword(s):  
Molecular Weight ◽  
Block Copolymer ◽  
Line Width ◽  
Self Assembly ◽  
Polymer Composition ◽  
Line Edge Roughness ◽  
Edge Roughness

Expanding the morphology library of block copolymer self-assemblies with clews of tubules

2017 ◽  
Vol 53 (36) ◽  
pp. 5005-5008 ◽  
Author(s):  
Xiao-Li Sun ◽  
Dong-Ming Liu ◽  
Pan Wang ◽  
Jia-Lin Tan ◽  
Kang-Kang Li ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Block Copolymer ◽  
High Molecular Weight ◽  
Self Assembly ◽  
High Asymmetry ◽  
Very High

Clews of tubules are reported via block copolymer self-assembly of P4VP-b-PS with both high asymmetry and very high molecular weight.

scholarly journals Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2443
Author(s):  
Tommaso Giammaria ◽  
Ahmed Gharbi ◽  
Anne Paquet ◽  
Paul Nealey ◽  
Raluca Tiron
Keyword(s):  
Self Assembly ◽  
Silicon Oxide ◽  
Good Control ◽  
Critical Dimension ◽  
Semiconductor Technology ◽  
Line Edge Roughness ◽  
Neutral Layer ◽  
Edge Roughness ◽  
Chemical Pattern ◽  
Line Space

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

scholarly journals Giant Gyroid and Templates from High-Molecular-Weight Block Copolymer Self-assembly

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sungmin Park ◽  
Yeongsik Kim ◽  
Hyungju Ahn ◽  
Jong Hak Kim ◽  
Pil J. Yoo ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Block Copolymer ◽  
High Molecular Weight ◽  
Self Assembly
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