Frequency stability of passively Q-switched non-planar ring oscillator under aircraft vibration

2019 ◽  
Author(s):  
Andrew J. Williams ◽  
Michael S. Griffith ◽  
Andrew G. McCarthy
Keyword(s):  
Frequency Stability ◽  
Ring Oscillator

Frequency stability and offset locking of a laser-diode-pumped Nd:YAG monolithic nonplanar ring oscillator

1987 ◽  
Vol 12 (3) ◽  
pp. 175 ◽  
Author(s):  
Thomas J. Kane ◽  
Alan C. Nilsson ◽  
Robert L. Byer
Keyword(s):  
Laser Diode ◽  
Frequency Stability ◽  
Ring Oscillator ◽  
Diode Pumped

Single Point PICA Probing with an Avalanche Photo-Diode

2001 ◽  
Author(s):  
Mike Bruce ◽  
Rama R. Goruganthu ◽  
Shawn McBride ◽  
David Bethke ◽  
J.M. Chin
Keyword(s):  
Single Photon ◽  
Single Point ◽  
Photon Counting ◽  
Ring Oscillator ◽  
Time Resolved ◽  
Single Photon Counting ◽  
Photo Diode ◽  
Avalanche Photo Diode ◽  
Photo Multiplier Tube ◽  
Channel Plate

Abstract For time resolved hot carrier emission from the backside, an alternate approach is demonstrated termed single point PICA. The single point approach records time resolved emission from an individual transistor using time-correlated-single-photon counting and an avalanche photo-diode. The avalanche photo-diode has a much higher quantum efficiency than micro-channel plate photo-multiplier tube based imaging cameras typically used in earlier approaches. The basic system is described and demonstrated from the backside on a ring oscillator circuit.

Application of Novel Low Current OBIRCH Amplifier and Nanoprobing to Identify Subtle Leakages in Advanced Node Technologies

2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh
Keyword(s):  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Ring Oscillator ◽  
High Signal ◽  
The Novel ◽  
Resistance Change ◽  
Three Samples ◽  
Relative Threshold ◽  
First Time

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

Backside FIB Device Modifications Through the BOX Layer of an SOI Device

2002 ◽  
Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Cross Section ◽  
Test Structure ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
Entire Process ◽  
Oscillator Frequency ◽  
Polysilicon Gate ◽  
Resistance Data

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

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