Effect of the sublayer material on the formation of electrical contact and the growth rate of carbon nanotubes in a low-temperature plasma using the example of Ni/Ti/Si and Fe/W/Si structures

2019 ◽  
Author(s):  
Viktor S. Klimin ◽  
Alexey А. Rezvan ◽  
Oleg A. Ageev
Keyword(s):  
Carbon Nanotubes ◽  
Growth Rate ◽  
Low Temperature ◽  
Electrical Contact ◽  
Low Temperature Plasma ◽  
Temperature Plasma

Low-temperature plasma enhanced chemical vapour deposition of carbon nanotubes

2004 ◽  
Vol 13 (4-8) ◽  
pp. 1171-1176 ◽  
Author(s):  
S. Hofmann ◽  
B. Kleinsorge ◽  
C. Ducati ◽  
A.C. Ferrari ◽  
J. Robertson
Keyword(s):  
Carbon Nanotubes ◽  
Low Temperature ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Temperature Plasma ◽  
Temperature Plasma

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

2020 ◽  
Vol 8 (37) ◽  
pp. 13033-13039
Author(s):  
Harrison Sejoon Kim ◽  
Su Min Hwang ◽  
Xin Meng ◽  
Young-Chul Byun ◽  
Yong Chan Jung ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Nitride ◽  
Low Temperature ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition ◽  
Wet Etch

Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.

Low temperature plasma carbon nanotubes growth on patterned catalyst

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2427-2431 ◽  
Author(s):  
M. Dubosc ◽  
T. Minea ◽  
M.P. Besland ◽  
C. Cardinaud ◽  
A. Granier ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Low Temperature ◽  
Low Temperature Plasma ◽  
Temperature Plasma
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