High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

2020 ◽  
Vol 8 (37) ◽  
pp. 13033-13039
Author(s):  
Harrison Sejoon Kim ◽  
Su Min Hwang ◽  
Xin Meng ◽  
Young-Chul Byun ◽  
Yong Chan Jung ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Nitride ◽  
Low Temperature ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition ◽  
Wet Etch

Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.

scholarly journals Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers

2015 ◽  
Vol 7 (40) ◽  
pp. 22525-22532 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Alberto Perrotta ◽  
Koen de Peuter ◽  
Harm C. M. Knoops ◽  
Wilhelmus M. M. Kessels ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Barrier Layers ◽  
Layer Deposition

A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition

2021 ◽  
Vol 47 (1) ◽  
pp. 96-98
Author(s):  
A. S. Gudovskikh ◽  
D. A. Kudryashov ◽  
A. I. Baranov ◽  
A. V. Uvarov ◽  
I. A. Morozov
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition

High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition

scholarly journals Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

2018 ◽  
Vol 6 (24) ◽  
pp. 6471-6482 ◽  
Author(s):  
Ali Haider ◽  
Petro Deminskyi ◽  
Mehmet Yilmaz ◽  
Kholoud Elmabruk ◽  
Ibrahim Yilmaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Anodized Aluminum ◽  
Temperature Plasma ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Cylinder Arrays ◽  
Layer Deposition

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD).

scholarly journals Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Zhen Zhu ◽  
Perttu Sippola ◽  
Oili M. E. Ylivaara ◽  
Chiara Modanese ◽  
Marisa Di Sabatino ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition

High Growth Rate SiO2 by Atomic Layer Deposition

2019 ◽  
Vol 13 (1) ◽  
pp. 453-457 ◽  
Author(s):  
Raija Matero ◽  
Suvi Haukka ◽  
Marko Tuominen
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Layer Deposition
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