Formation of nanosized elements by ion beam lithography for multiple fin field effect transistor prototyping

2019 ◽  
Author(s):  
Konstantin Tsarik ◽  
Vladimir K. Nevolin ◽  
Artur I. Martynov ◽  
Sergey Fedotov
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Effect Transistor

Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

2016 ◽  
Vol 34 (6) ◽  
pp. 06KA03 ◽  
Author(s):  
Alessandra Leonhardt ◽  
Marcos Vinicius Puydinger dos Santos ◽  
José Alexandre Diniz ◽  
Leandro Tiago Manera ◽  
Lucas Petersen Barbosa Lima
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Viable Alternative ◽  
Ion Beam Lithography ◽  
Effect Transistor

Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor

2003 ◽  
Vol 69 (2-4) ◽  
pp. 480-484 ◽  
Author(s):  
V.M. Mikoushkin ◽  
V.V. Mamutin ◽  
S.E. Sysoev ◽  
V.V. Shnitov ◽  
Yu.S. Gordeev
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Beam ◽  
Metal Insulator ◽  
Effect Transistor

Fabrication of a high-T/sub c/ superconducting field effect transistor by ion beam sputtering

1997 ◽  
Vol 7 (2) ◽  
pp. 3528-3531 ◽  
Author(s):  
T. Saito ◽  
Xuyang Cai ◽  
K. Usami ◽  
T. Kobayashi ◽  
T. Goto
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Effect Transistor
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