Fabrication of a high-T/sub c/ superconducting field effect transistor by ion beam sputtering

1997 ◽  
Vol 7 (2) ◽  
pp. 3528-3531 ◽  
Author(s):  
T. Saito ◽  
Xuyang Cai ◽  
K. Usami ◽  
T. Kobayashi ◽  
T. Goto
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Effect Transistor

Ion beam fabrication of metal/insulator/HT-superconductor nanostructures for field effect transistor

2003 ◽  
Vol 69 (2-4) ◽  
pp. 480-484 ◽  
Author(s):  
V.M. Mikoushkin ◽  
V.V. Mamutin ◽  
S.E. Sysoev ◽  
V.V. Shnitov ◽  
Yu.S. Gordeev
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Beam ◽  
Metal Insulator ◽  
Effect Transistor

SiGe Nanowire Field Effect Transistors

2008 ◽  
Vol 8 (1) ◽  
pp. 457-460 ◽  
Author(s):  
Cheng Qi ◽  
Yaswanth Rangineni ◽  
Gary Goncher ◽  
Raj Solanki ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Boron Doped ◽  
High K ◽  
Pt Electrodes ◽  
Effect Transistor

Si0.5Ge0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V−1s−1. Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V−1s−1.

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