Hybrid materials by mimicking mineralization from the vapor phase (Conference Presentation)

Author(s):  
Mato Knez
Keyword(s):  
2020 ◽  
Vol 31 (34) ◽  
pp. 342001
Author(s):  
Ka Ashurbekova ◽  
Kr Ashurbekova ◽  
G Botta ◽  
O Yurkevich ◽  
M Knez

2011 ◽  
Vol 21 (16) ◽  
pp. 3047-3055 ◽  
Author(s):  
Seung-Mo Lee ◽  
Vladislav Ischenko ◽  
Eckhard Pippel ◽  
Admir Masic ◽  
Oussama Moutanabbir ◽  
...  

2017 ◽  
Vol 4 (5) ◽  
pp. 747-771 ◽  
Author(s):  
Collen Z. Leng ◽  
Mark D. Losego

A review of vapor phase infiltration (VPI), a unique gas-phase process for transforming polymers into organic–inorganic hybrid materials.


2013 ◽  
Vol 25 (4) ◽  
pp. 613-622 ◽  
Author(s):  
Watcharop Chaikittisilp ◽  
Stephanie A. Didas ◽  
Hyung-Ju Kim ◽  
Christopher W. Jones

2011 ◽  
Vol 21 (16) ◽  
pp. 3002-3002
Author(s):  
Seung-Mo Lee ◽  
Vladislav Ischenko ◽  
Eckhard Pippel ◽  
Admir Masic ◽  
Oussama Moutanabbir ◽  
...  

Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  

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