Direct observations of compositional changes of sub-20-nm Er-doped phase-separated nanoparticles in optical fibers (Conference Presentation)

2019 ◽  
Author(s):  
Wilfried Blanc ◽  
Isabelle Martin ◽  
Hugues François Saint-Cyr ◽  
Xavier Bidault ◽  
Stéphane Chaussedent ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Direct Observations ◽  
Compositional Changes ◽  
Er Doped ◽  
20 Nm

scholarly journals Preparation and Properties of Er-Doped ZrO2 Nanocrystalline Phase-Separated Preforms of Optical Fibers by MCVD Process

2012 ◽  
Vol 9 (2) ◽  
pp. 341-348 ◽  
Author(s):  
Anirban Dhar ◽  
Ivan Kasik ◽  
Bernard Dussardier ◽  
Ondrej Podrazky ◽  
Vlastimil Matejec
Keyword(s):  
Optical Fibers ◽  
Nanocrystalline Phase ◽  
Er Doped

scholarly journals Direct Observations of Confined Layer Slip in Cu/Nb Multilayers

2012 ◽  
Vol 18 (5) ◽  
pp. 1155-1162 ◽  
Author(s):  
Nan Li ◽  
Jian Wang ◽  
Amit Misra ◽  
Jian Yu Huang
Keyword(s):  
Metallic Multilayers ◽  
Dislocation Glide ◽  
Direct Observations ◽  
Transmission Electron ◽  
Dominant Deformation Mechanism ◽  
Deformation Work ◽  
20 Nm ◽  
Nanoscale Metallic Multilayers ◽  
Mechanisms Of Deformation

AbstractIn situ nanoindentation of a 30 nm Cu/20 nm Nb multilayer film in a transmission electron microscope revealed confined layer slip as the dominant deformation mechanism. Dislocations were observed to nucleate from the Cu-Nb interfaces in both layers. Dislocation glide was confined by interfaces to occur within each layer, without transmission across interfaces. Cu and Nb layers co-deformed to large plastic strains without cracking. These microscopy observations provide insights in the unit mechanisms of deformation, work hardening, and recovery in nanoscale metallic multilayers.

Optical Fiber Hydrogen Sensor Based on Magnetron Sputtered Pd/V2O5 Films

2010 ◽  
Vol 663-665 ◽  
pp. 898-901
Author(s):  
Ling De Zhou ◽  
Jin Shan Huang ◽  
Yong Shi ◽  
Yin Wei Wu ◽  
Hai Hu Yu
Keyword(s):  
Thin Films ◽  
Optical Fiber ◽  
Response Time ◽  
Optical Fibers ◽  
Hydrogen Sensor ◽  
Hydrogen Gas ◽  
Multimode Fibers ◽  
Glass Substrates ◽  
Reflected Light ◽  
20 Nm

Laminated thin films composed of V2O5 and Pd (or Pt-Pd) layers were deposited on glass substrates and the end faces of multimode optical fibers, and the sensitive behaviors of the thin films to hydrogen gas were studied using a UV-visible spectrophotometer and an optical fiber sensor’s experimental setup. Both the thickness of the V2O5 layer and that of the Pd layer have obvious influences on the sensitivity performance of the Pd/V2O5 films. The Pd (30 nm)/V2O5 (280 nm) film deposited on a glass substrate is sensitive to 0.1% hydrogen and the highest change in relative transmittance is about 25% when exposed to 4% hydrogen. Pd/V2O5 films were coated onto the end faces of multimode fibers to form optical fiber sensors. The response time of the Pd (20 nm)/V2O5 (280 nm) sensor is about 50 s and the change in relative reflected light intensity is about 18% upon exposure to 4% hydrogen. Deposition of Pt-Pd double layer instead of Pd signal layer over V2O5 can reduce the response time of the sensor. The response time of the Pd (20 nm)/V2O5 (280 nm) sensor is about 50 s, while that of the Pt (10 nm)-Pd (10 nm)/V2O5 (280 nm) sensor is about 25 s.

Light Emission From Er-Doped Si: Materials Properties, Mechanisms, and Device Performance

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 25-32 ◽  
Author(s):  
Salvatore Coffa ◽  
Giorgia Franzo ◽  
Francesco Priolo
Keyword(s):  
Rare Earth ◽  
Optical Fibers ◽  
Room Temperature ◽  
Light Emission ◽  
Device Performance ◽  
Rare Earth Ion ◽  
Materials Properties ◽  
Er Doped ◽  
Rare Earth Impurities ◽  
Maximum Transmission

The achievement of efficient room-temperature light emission from crystalline Si is a crucial step toward the achievement of fully Si-based optoelec-tronics. However Si, the leading semiconductor in microelectronic applications, is unable to perform as well in the optical arena. In fact due to its indirect bandgap, Si does not exhibit efficient light emission and has been considered unsuitable for optoelectronic applications. Several efforts have been dedicated to overcoming this limitation. Among them, luminescence through the incorporation of rare-earth impurities has been considered In particular, erbium doping has been demonstrated as a valid approach toward achievement of efficient light emission from Si.1−43 Erbium is a rare-earth ion that, in its 3+ state, can emit photons at 1.54 μm because of an intra-4f shell transition between the first excited state (4I13/2) and the ground state (4I15/2). This emission is particularly attractive because its wavelength falls inside a window of maximum transmission for the silica optical fibers. When Er ions are inserted within a Si matrix, the excitation (4I15/2 → 4I13/2) can be achieved through the carriers provided by the host, whereas the subsequent deexcitation (4I13/2 → 4I15/2) can result in a sharp, atomlike light emission.

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